Silicon RF Power Semiconductors

RD07MVS2

RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W

RD07MVS2

17 Aug 2010

2/10

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

ABSOLUTE MAXIMUM RATINGS

(Tc=25°C UNLESS OTHERWISE NOTED)

SYMBOL

PARAMETER

CONDITIONS

RATINGS

UNIT

VDSS

Drain to source voltage

Vgs=0V

30

V

VGSS

Gate to source voltage

Vds=0V

-5/+10

V

Pch

Channel dissipation

50

W

Pin

Input Power

1.5

W

ID

Drain Current

-

3

A

Tch

Junction Temperature

-

150

°C

Tstg

Storage temperature

-

-40 to +125

°C

Rth j-c

Thermal resistance

Junction to case

2.5

°C/W

SCHEMATIC DRAWING

Note: Above parameters are guaranteed independently.

ELECTRICAL CHARACTERISTICS

LIMITS

UNIT

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX.

-

-

200

uA

Gate to source leak current

-

-

1

uA

Gate threshold Voltage

1.4

1.7

2.4

V

Pout1

Output power

7

8

-

W

ηD1

Drain efficiency

Pin=0.3W,Idq=700mA

55

60

-

%

Pout2

Output power

7

8

-

W

ηD2

Drain efficiency

Pin=0.7W,Idq=750mA

50

55

-

%

Load VSWR tolerance

Load VSWR=20:1(All Phase)

No destroy

-

Load VSWR tolerance

Load VSWR=20:1(All Phase)

No destroy

-

Note : Above parameters , ratings , limits and conditions are subject to change.

G

S

D