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RD06HVF1 Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor |
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RD06HVF1 Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor |
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4 / 9 page  Silicon RF Power Semiconductors RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W RD06HVF1 6 Jul 2010 4/9 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS Vgs-Ids CHARACTORISTICS 2 0 1 2 3 4 5 024 68 10 Vgs(V) Vds=10V Tc=-25~+75°C -25°C +75°C +25°C Vgs- gm CHARACTORISTICS 0.0 0.5 1.0 1.5 2.0 01 23 4 5 67 89 Vgs(V) Vds=10V Tc=-25~+75°C -25°C +75°C +25°C Pin-Po CHARACTERISTICS 0 10 20 30 40 50 0 5 10 15 20 25 30 Pin(dBm) 0 20 40 60 80 100 Ta=+25°C f=175MHz Vdd=12.5V Idq=0.3A Po ηｄ Ｉｄｄ Gp Pin-Po CHARACTERISTICS 0 2 4 6 8 10 12 14 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Pin(W) 30 40 50 60 70 80 90 100 Po ηd Idd Ta=25°C f=175MHz Vdd=12.5V Idq=0.3A Vdd-Po CHARACTERISTICS 0 2 4 6 8 10 12 14 16 46 8 10 12 14 Vdd(V) 0 1 2 3 4 Idd Ta=25°C f=175MHz Pin=0.3W Idq=0.3A Zg=ZI=50 ohm Po |
Similar Part No. - RD06HVF1 |
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Similar Description - RD06HVF1 |
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