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RD06HVF1 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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RD06HVF1 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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3 / 9 page  Silicon RF Power Semiconductors RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W RD06HVF1 6 Jul 2010 3/9 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE 0 10 20 30 40 50 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) Vgs-Ids CHARACTERISTICS 0 1 2 3 4 5 02 46 8 10 Vgs(V) Ta=+25°C Vds=10V Vds VS. Crss CHARACTERISTICS 0 2 4 6 8 10 010 20 30 Vds(V) Ta=+25°C f=1MHz Vds VS. Coss CHARACTERISTICS 0 20 40 60 80 100 010 20 30 Vds(V) Ta=+25°C f=1MHz Vds VS. Ciss CHARACTERISTICS 0 10 20 30 40 50 60 010 20 30 Vds(V) Ta=+25°C f=1MHz Vds-Ids CHARACTERISTICS 0 1 2 3 4 02468 10 Vds(V) Ta=+25°C Vgs=9V Vgs=8V Vgs=7V Vgs=6V Vgs=5V Vgs=10V |
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