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MBRA140T3 Datasheet(PDF) 2 Page - ON Semiconductor |
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MBRA140T3 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page MBRA140T3 http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 V Average Rectified Forward Current (At Rated VR, TC = 95°C) IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 100°C) IFRM 2.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 30 A Storage Temperature Tstg −55 to +150 °C Operating Junction Temperature TJ −55 to +125 °C Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/ms ESD Ratings: Machine Model = C Human Body Model = 3B > 400 > 8000 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 1) RqJL RqJA 35 86 °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2) (IF = 1.0 A) see Figure 2 for other Values (IF = 2.0 A) VF TJ = 25°C TJ = 100°C V 0.55 0.71 0.505 0.74 Maximum Instantaneous Reverse Current (VR = 40 V) see Figure 4 for other Values (VR = 20 V) IR TJ = 25°C TJ = 100°C mA 0.5 0.1 10 4.0 1. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4. 2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. |
Similar Part No. - MBRA140T3_08 |
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Similar Description - MBRA140T3_08 |
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