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RA30H1317M1-201 Datasheet(PDF) 7 Page - Mitsubishi Electric Semiconductor |
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RA30H1317M1-201 Datasheet(HTML) 7 Page - Mitsubishi Electric Semiconductor |
7 / 10 page ![]() Silicon RF Power Semiconductors RoHS COMPLIANCE RA30H1317M1 RA30H1317M1 24 Jun 2010 7/10 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) C1, C2: 4700pF, 22uF in parallel Directional Coupler Attenuator Power Meter Spectrum Analyzer Signal Generator Attenuator Pre- amplifier Power Meter Directional Coupler DUT 5 4 3 2 1 ZG=50Ω ZL=50Ω C1 C2 - + DC Power Supply VGG + - DC Power Supply VDD TEST BLOCK DIAGRAM Attenuator 1 2 3 4 5 EQUIVALENT CIRCUIT |
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