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RA20H8087M Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part # RA20H8087M
Description  806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

RA20H8087M Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

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Silicon RF Power Semiconductors
RoHS COMPLIANCE
RA20H8087M
RA20H8087M
24 Jun 2010
4/10
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
versus DRAIN VOLTAGE
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
versus DRAIN VOLTAGE
0
10
20
30
40
50
60
70
80
2
4
6
8
10
12
14
16
DRAIN VOLTAGE VDD(V)
0
2
4
6
8
10
12
14
16
Pout
f=764MHz,
VGG=5V,
Pin=50mW
IDD
0
10
20
30
40
50
60
70
80
2
4
6
8
10
12
14
16
DRAIN VOLTAGE VDD(V)
0
2
4
6
8
10
12
14
16
Pout
f=806MHz,
VGG=5V,
Pin=50mW
IDD
0
10
20
30
40
50
60
70
80
2
4
6
8
10
12
14
16
DRAIN VOLTAGE VDD(V)
0
2
4
6
8
10
12
14
16
Pout
f=825MHz,
VGG=5V,
Pin=50mW
IDD
0
10
20
30
40
50
60
70
80
24
68
10
12
14
16
DRAIN VOLTAGE VDD(V)
0
2
4
6
8
10
12
14
16
Pout
f=851MHz,
VGG=5V,
Pin=50mW
IDD
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
versus GATE VOLTAGE
0
10
20
30
40
50
60
2.5
3
3.54
4.555.5
GATE VOLTAGE VGG(V)
0
2
4
6
8
10
12
Pout
f=764MHz,
VDD=12.5V,
Pin=50mW
IDD
0
10
20
30
40
50
60
2.53
3.544.5
5
5.5
GATE VOLTAGE VGG(V)
0
2
4
6
8
10
12
Pout
f=806MHz,
VDD=12.5V,
Pin=50mW
IDD
0
10
20
30
40
50
60
70
80
2
4
6
8
10
12
14
16
DRAIN VOLTAGE VDD(V)
0
2
4
6
8
10
12
14
16
Pout
f=870MHz,
VGG=5V,
Pin=50mW
IDD
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)


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