Silicon RF Power Semiconductors

RoHS COMPLIANCE

RA18H1213G

RA18H1213G

24 Jun 2010

2/9

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

SYMBOL PARAMETER

CONDITIONS

RATING

UNIT

Drain Voltage

17

V

Gate Voltage

6

V

Input Power

300

mW

Output Power

30

W

Operation Case Temperature Range

f=1.24-1.30GHz,

-30 to +110

°C

Storage Temperature Range

-40 to +110

°C

The above parameters are independently guaranteed.

SYMBOL PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

f

Frequency Range

1.24

-

1.30

GHz

Output Power

18

-

-

W

η

T

Total Efficiency

20

-

-

%

2

-

-

-35

dBc

ρ

in

Input VSWR

-

-

3:1

—

Gate Current

-

1

-

mA

Gp

Linear power gain

23

-

-

dB

IMD3

3

-

-

-20

dBc

IMD5

5

Delta f=f1-f2=10KHz

-

-

-25

dBc

—

Stability

No parasitic oscillation

—

—

Load VSWR Tolerance

No degradation or destroy

—

All parameters, conditions, ratings, and limits are subject to change without notice.