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SUT290 Datasheet(PDF) 1 Page - KODENSHI_AUK CORP. |
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SUT290 Datasheet(HTML) 1 Page - KODENSHI_AUK CORP. |
1 / 6 page KSD-T7F006-001 1 SUT290 Dual NPN-PNP complementary Bipolar transistor Internal schematic diagram Features • Low VCE(sat)=0.5V (Typ.) • Simplified circuit design • Reduced component count Applications • Push-Pull or Totem-Pole configuration • MOSFET and IGBT gate driving • Motor, relay and solenoid driving Description The SUT290 is a Hybrid dual NPN-PNP complementary power bipolar transistor manufactured by using the latest low voltage planar technology. The SUT290 is housed in dual island SOP-8 package with separated terminals for higher assembly flexibility, specifically recommended to be used in Push-Pull or Totem Pole configuration as post IGBTs and MOSFETs driver. Ordering Information Type NO. Marking Package Code SUT290 SUT290 SOP-8 Absolute Maximum Ratings (Ta=25 °C) Rating Characteristic Symbol Tr1 Tr2 Unit Collector-base voltage VCBO 40 -40 V Collector-emitter voltage VCEO 32 -32 V Emitter-base voltage VEBO 5 -5 V Collector current IC 2 -2 A 2 W/TOTAL Power dissipation PD ※ 1.4 W/ELEMENT Junction temperature TJ 150 °C Storage temperature range Tstg -55~150 °C ※ : When mounted on 40x40x0.8 ㎜ ceramic substrate SOP-8 |
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