Silicon RF Power Semiconductors

RoHS COMPLIANCE

RA13H4452M

RA13H4452M

22 Jun 2010

2/9

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

SYMBOL PARAMETER

CONDITIONS

RATING

UNIT

Drain Voltage

17

V

Gate Voltage

6

V

Input Power

100

mW

Output Power

20

W

Operation Case Temperature Range

f=440-520MHz,

-30 to +110

°C

Storage Temperature Range

-40 to +110

°C

The above parameters are independently guaranteed.

SYMBOL PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

f

Frequency Range

440

-

520

MHz

Output Power

13

-

-

W

η

T

Total Efficiency

40

-

-

%

2

-

-

-30

dBc

ρ

in

Input VSWR

-

-

3:1

—

Gate Current

-

1

-

mA

—

Stability

No parasitic oscillation

—

—

Load VSWR Tolerance

Load VSWR=20:1

No degradation or destroy

—

All parameters, conditions, ratings, and limits are subject to change without notice.