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RA05H9595M Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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RA05H9595M Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
3 / 8 page Silicon RF Power Semiconductors RoHS COMPLIANCE RA05H9595M RA05H9595M 22 Jun 2010 3/8 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3 rd HARMONICS versus FREQUENCY and INPUT VSWR versus FREQUENCY OUTPUT POWER, POWER GAIN and OUTPUT POWER and DRAIN CURRENT DRAIN CURRENT versus INPUT POWER versus DRAIN VOLTAGE OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 0 5 10 15 20 25 30 920 930 940 950 960 970 980 FREQUENCY f (MHz) 10 20 30 40 50 60 70 V DD=14V V GG=5V P in=1m W P out η T ρ in 0 10 20 30 40 50 -10 -5 0 5 10 INPUT POWER Pin (dBm) 1 2 3 4 5 6 f=953MHz V DD=14V V GG=5V P out I DD Gp 0 5 10 15 20 25 2 4 6 8 10 12 14 DRAIN VOLTAGE VDD (V) 0 1 2 3 4 5 P out f=953MHz V GG=5V P in=1m W I DD 0 5 10 15 20 25 3 3.5 4 4.5 5 5.5 GATE VOLTAGE VGG (V) 0 1 2 3 4 5 P out f=953MHz V DD=14V P in=1m W I DD -70 -60 -50 -40 -30 -20 920 930 940 950 960 970 980 FREQUENCY f (MHz) 2 nd 3 rd V DD=14V V GG=5V P in=1m W |
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