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RA02M8087MD-101 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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RA02M8087MD-101 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
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1 / 9 page  Silicon RF Power Semiconductors RA02M8087MD RA02M8087MD RA02M8087MD RA02M8087MD RoHS Compliance , 806-869MHz 34dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO RA02M8087MD 28 Jun 2010 1/9 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS DESCRIPTION The RA02M8087MD is a 34 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the 806 to 869 MHz range. FEATURES • Enhancement-Mode MOSFET Transistors (IDD ≅0 @ V DD=7.2V, VGG=0V) • Pout>34dBm @ VDD=7.2V, Pin=14.5dBm Idq1=20mA(Vgg1adjust.),Idq2=300mA(Vgg2 adjust.) , • η T>30% @ VDD=7.2V, Pout=34dBm (Pin adjust.), Idq1=20mA(Vgg1 adjust.),Idq2=300mA(Vgg2 adjust.) • IMD3<-26dBc @ VDD=7.2V, Pout (average) =31dBm (Pin adjust.) Two tone test at 1KHz separation Idq1=20mA(Vgg1 adjust.),Idq2=300mA(Vgg2 adjust.) • Broadband Frequency Range: 806-869MHz • Low-Power Adjust. Current IGG=1mA (typ) at VGG=3.15V • Module Size: 30 x 10 x 5.4 mm RoHS COMPLIANT • RA02M8087MD-101 is a RoHS compliant products. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA02M8087MD-101 Antistatic tray, 50 modules/tray BLOCK DIAGRAM 1 RF Input (Pin) 2 FIRST STAGE GATE BIAS DC SUPPLY TERMINAL（Vgg1） 3 FINAL STAGE GATE BIAS DC SUPPLY TERMINAL（Vgg2） 4 Drain Voltage (VDD), Battery 5 RF Output (Pout) 6 RF Ground (Case) 3 2 4 1 5 6 PACKAGE CODE: H46S |
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