KSD-T6O024-000

2

SMN09L20D

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Drain-source breakdown voltage

200

-

-

V

Gate threshold voltage

1.0

-

2.25

V

Drain-source cut-off current

-

-

1

uA

Gate leakage current

-

-

100

nA

Drain-source on-resistance

④

-

0.34

0.40



Forward transfer conductance

④

-

5.5

-

S

Input capacitance

Ciss

f=1MHz

-

556

600

pF

Output capacitance

Coss

-

100

150

Reverse transfer capacitance

Crss

-

17

30

Turn-on delay time

③④

-

18

-

ns

Rise time

-

36

-

Turn-off delay time

-

133

-

Fall time

-

45

-

Total gate charge

③④

-

9

15

nC

Gate-source charge

-

4

-

Gate-drain charge

-

3

-

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Source current (DC)

Integral reverse diode

in the MOSFET

-

-

9

A

Source current (Pulsed)

①

-

-

36

Forward voltage

④

-

-

1.5

V

Reverse recovery time

-

158

-

ns

Reverse recovery charge

-

0.97

-

uC

Note ;

①

Repetitive rating : Pulse width limited by maximum junction temperature

②

③

Pulse Test : Pulse width≤300us, Duty cycle≤2%

④

Essentially independent of operating temperature