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SMK0825D Datasheet(PDF) 1 Page - KODENSHI_AUK CORP. |
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SMK0825D Datasheet(HTML) 1 Page - KODENSHI_AUK CORP. |
1 / 8 page Rev. date: 12-AUG-11 KSD-T6O031-001 www.auk.co.kr 1 of 8 SMK0825D Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features High voltage: BVDSS=250V (Min.) Low gate charge: Qg=14.5nC (Typ.) Low drain-source On resistance: RDS(on)=0.43Ω (Max.) RoHS compliant device Halogen free package Ordering Information Part Number Marking Package SMK0825D SMK0825 TO-252 Marking Information Absolute maximum ratings (T C=25C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage VDSS 250 V Repetitive Avalanche Voltage (Note 1, 2) VDS(Avalanche) 300 V Gate-source voltage VGSS 30 V Drain current (DC) * ID Tc=25C 8 A Tc=100C 5.2 A Drain current (Pulsed) * IDM 32 A Single pulsed avalanche energy (Note 2) EAS 356 mJ Repetitive avalanche current (Note 1) IAR 8 A Repetitive avalanche energy (Note 1) EAR 7.4 mJ Power dissipation PD 48 W Junction temperature TJ 150 C Storage temperature range Tstg -55~150 C * Limited only maximum junction temperature TO-252 D G S SMK 0825 YWW □ Column 1, 2: Device Code Column 3: Production Information e.g.) YWW □ -. YWW: Date Code (year, week) -. □: Factory Code (‘A’: AUK, ‘S’: SP Semi.) |
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