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1SS400T1G Datasheet(PDF) 1 Page - ON Semiconductor |
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1SS400T1G Datasheet(HTML) 1 Page - ON Semiconductor |
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© Semiconductor Components Industries, LLC, 2010 June, 2010 − Rev. 6 1 Publication Order Number: 1SS400T1/D 1SS400T1G High-Speed Switching Diode Features • High−Speed Switching Applications • Lead Finish: 100% Matte Sn (Tin) • Qualified Maximum Reflow Temperature: 260°C • Extremely Small SOD−523 Package • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Reverse Voltage VR 100 V Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 1) @TA = 25°C Derate above 25°C PD 200 1.57 mW mW/°C Thermal Resistance, Junction-to-Ambient RqJA 635 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad. ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 80 Vdc) IR − 0.1 mAdc Diode Capacitance (VR = 0 V, f = 1.0 MHz) CD − 3.0 pF Forward Voltage (IF = 100 mAdc) VF − 1.2 Vdc Reverse Recovery Time (IF = IR = 10 mAdc) trr − 4.0 ns http://onsemi.com 1 CATHODE 2 ANODE SOD−523 CASE 502 PLASTIC A = Device Code M = Date Code* G = Pb−Free Package MARKING DIAGRAM Device Package Shipping† ORDERING INFORMATION 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. A M G G 1 1SS400T1G SOD−523 (Pb−Free) 3000/Tape & Reel (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. |
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