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SKIM459GD12E4 Datasheet(PDF) 1 Page - Semikron International |
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SKIM459GD12E4 Datasheet(HTML) 1 Page - Semikron International |
1 / 5 page SKiM459GD12E4 © by SEMIKRON Rev. 3 – 14.07.2011 1 SKiM® 93 GD Trench IGBT Modules SKiM459GD12E4 Features • IGBT 4 Trench Gate Technology • Solderless sinter technology •VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts and electrical contacts • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tj = 175 °C Ts =25°C 554 A Ts =70°C 450 A ICnom 450 A ICRM ICRM = 3xICnom 1350 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj =150 °C 10 µs Tj -40 ... 175 °C Inverse diode IF Tj = 175 °C Ts =25°C 438 A Ts =70°C 347 A IFnom 450 A IFRM IFRM = 3xIFnom 1350 A IFSM tp = 10 ms, sin 180°, Tj =25°C 2430 A Tj -40 ... 175 °C Module It(RMS) Tterminal =80 °C 700 A Tstg -40 ... 125 °C Visol AC sinus 50 Hz, t = 1 min 2500 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =450 A VGE =15 V chiplevel Tj =25 °C 1.85 2.10 V Tj =150 °C 2.25 2.45 V VCE0 Tj =25 °C 0.8 0.9 V Tj =150 °C 0.7 0.8 V rCE VGE =15 V Tj =25 °C 2.3 2.7 m Tj =150 °C 3.4 3.7 m VGE(th) VGE=VCE, IC =18 mA 5 5.8 6.5 V ICES VGE =0 V VCE = 1200 V Tj =25 °C 0.1 0.3 mA Tj =150 °C mA Cies VCE =25V VGE =0 V f=1MHz 26.40 nF Coes f=1MHz 1.74 nF Cres f=1MHz 1.41 nF QG VGE = - 8 V...+ 15 V 2550 nC RGint Tj =25°C 1.7 td(on) VCC = 600 V IC =450 A RG on =1.3 RG off =1.3 di/dton = 8340 A/µs di/dtoff =3660 A/µs Tj =150 °C 276 ns tr Tj =150 °C 55 ns Eon Tj =150 °C 22 mJ td(off) Tj =150 °C 538 ns tf Tj =150 °C 114 ns Eoff Tj =150 °C 57 mJ Rth(j-s) per IGBT 0.092 K/W |
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