SKIM459GD12E4 datasheet(1/5 Pages) SEMIKRON

Part #	SKIM459GD12E4

Description	Trench IGBT Modules

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Manufacturer	SEMIKRON [Semikron International]

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SKiM459GD12E4

Rev. 3 – 14.07.2011

1

SKiM® 93

GD

Trench IGBT Modules

SKiM459GD12E4

Features

• IGBT 4 Trench Gate Technology

• Solderless sinter technology

•VCE(sat) with positive temperature

coefficient

• Low inductance case

• Isolated by Al2O3 DCB (Direct Copper

Bonded) ceramic substrate

• Pressure contact technology for

thermal contacts and electrical

contacts

• High short circuit capability, self limiting

to 6 x IC

• Integrated temperature sensor

Typical Applications*

• Automotive inverter

• High reliability AC inverter wind

• High reliability AC inverter drives

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

IGBT

VCES

1200

V

IC

Tj = 175 °C

Ts =25°C

554

A

Ts =70°C

450

A

ICnom

450

A

ICRM

ICRM = 3xICnom

1350

A

VGES

-20 ... 20

V

tpsc

VCC = 800 V

VGE ≤ 15 V

VCES ≤ 1200 V

Tj =150 °C

10

µs

Tj

-40 ... 175

°C

Inverse diode

IF

Tj = 175 °C

Ts =25°C

438

A

Ts =70°C

347

A

IFnom

450

A

IFRM

IFRM = 3xIFnom

1350

A

IFSM

tp = 10 ms, sin 180°, Tj =25°C

2430

A

Tj

-40 ... 175

°C

Module

It(RMS)

Tterminal =80 °C

700

A

Tstg

-40 ... 125

°C

Visol

AC sinus 50 Hz, t = 1 min

2500

V

Characteristics

Symbol Conditions

min.

typ.

max.

Unit

IGBT

VCE(sat)

IC =450 A

VGE =15 V

chiplevel

Tj =25 °C

1.85

2.10

V

Tj =150 °C

2.25

2.45

V

VCE0

Tj =25 °C

0.8

0.9

V

Tj =150 °C

0.7

0.8

V

rCE

VGE =15 V

Tj =25 °C

2.3

2.7

m

Tj =150 °C

3.4

3.7

m

VGE(th)

VGE=VCE, IC =18 mA

5

5.8

6.5

V

ICES

VGE =0 V

VCE = 1200 V

Tj =25 °C

0.1

0.3

mA

Tj =150 °C

mA

Cies

VCE =25V

VGE =0 V

f=1MHz

26.40

nF

Coes

f=1MHz

1.74

nF

Cres

f=1MHz

1.41

nF

QG

VGE = - 8 V...+ 15 V

2550

nC

RGint

Tj =25°C

1.7



td(on)

VCC = 600 V

IC =450 A

RG on =1.3 

RG off =1.3 

di/dton = 8340 A/µs

di/dtoff =3660 A/µs

Tj =150 °C

276

ns

tr

Tj =150 °C

55

ns

Eon

Tj =150 °C

22

mJ

td(off)

Tj =150 °C

538

ns

tf

Tj =150 °C

114

ns

Eoff

Tj =150 °C

57

mJ

Rth(j-s)

per IGBT

0.092

K/W

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