SBT5551 datasheet(2/5 Pages) KODENSHI

Part #	SBT5551

Description	NPN Silicon Transistor

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Manufacturer	KODENSHI [KODENSHI_AUK CORP.]

Direct Link	http://www.kodenshi.co.kr

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2 / 5 page

KSD-T5C066-000

2

SBT5551

Electrical Characteristics

(Ta=25

°C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Collector-Base breakdown voltage

BVCBO

IC=100μA, IE=0

180

-

V

Collector-Emitter breakdown voltage

BVCEO

IC=1mA, IB=0

160

-

V

Emitter-Base breakdown voltage

BVEBO

IE=10μA, IC=0

6

-

V

Collector cut-off current

ICBO

VCB=120V, IE=0

-

100

nA

Emitter cut-off current

IEBO

VEB=4V, IC=0

-

100

nA

DC current gain

hFE (1)

VCE=5V, IC=1mA

80

-

DC current gain

hFE (2)

VCE=5V, IC=10mA

80

-

250

-

DC current gain

hFE (3)

VCE=5V, IC=50mA

30

-

Collector-Emitter saturation voltage

VCE(sat)(1)

*

IC=10mA, IB=1mA

-

0.2

V

Collector-Emitter saturation voltage

VCE(sat)(2)

*

IC=50mA, IB=5mA

-

0.5

V

Base-Emitter saturation voltage

VBE(sat)(1)

*

IC=10mA, IB=1mA

-

1

V

Base-Emitter saturation voltage

VBE(sat)(2)*

IC=50mA, IB=5mA

-

1

V

Transition frequency

fT

VCE=10V, IC=10mA

100

-

400

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

-

6

pF

*

: Pulse Tester : Pulse Width ≤300

μs, Duty Cycle ≤2.0%

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SBT5551 Datasheet(PDF) 2 Page - KODENSHI_AUK CORP.

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