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2SA1980SF Datasheet(PDF) 1 Page - KODENSHI_AUK CORP. |
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2SA1980SF Datasheet(HTML) 1 Page - KODENSHI_AUK CORP. |
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1 / 4 page  KSD-T5C081-000 1 2SA1980SF PNP Silicon Transistor PIN Connection SOT-23F Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with 2SC5343SF Ordering Information Type NO. Marking Package Code CA □ □ 2SA1980SF ① ② ③ SOT-23F ① Device Code ②hFE Rank ③Year&Week Code Absolute maximum ratings (Ta=25 °C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -50 V Collector-Emitter voltage VCEO -50 V Emitter-Base voltage VEBO -5 V Collector current IC -150 mA Collector dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25 °C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-100μA, IE=0 -50 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -50 - - V Emitter-Base breakdown voltage BVEBO IE=-10μA, IC=0 -5 - - V Collector cut-off current ICBO VCB=-50V, IE=0 - - -0.1 μA Emitter cut-off current IEBO VEB=-5V, IC=0 - - -0.1 μA DC current gain hFE* VCE=-6V, IC=-2mA 70 - 700 - Collector-Emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA - - -0.3 V Transition frequency fT VCE=-10V, IC=-1mA 80 - - MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz - 4 7 pF Noise figure NF VCE=-6V, IC=-0.1mA f=1KHz, Rg=10KΩ - - 10 dB *: hFE rank / O : 70~140, Y : 120~240, G : 200~400, L : 300~700. 1 2 3 |
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