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FMV11N60E Datasheet(PDF) 3 Page - Fuji Electric |
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FMV11N60E Datasheet(HTML) 3 Page - Fuji Electric |
3 / 5 page 33 FUJI POWER MOSFET FMV11N60E -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 typ. max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA Tch [°C] 10 -1 10 0 10 1 10 2 100 10 1 10 2 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=15 Ω td(on) tr tf td(off) 10-2 10-1 100 101 102 10 0 10 1 102 103 10 4 VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5.5A,VGS=10V 0 10 20 30 40 50 60 70 80 0 2 4 6 8 10 12 14 16 18 20 Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=11A,Tch=25 °C 480V 300V Vcc= 120V 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0.01 0.1 1 10 100 VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C |
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