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FMV09N90E Datasheet(PDF) 1 Page - Fuji Electric |
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FMV09N90E Datasheet(HTML) 1 Page - Fuji Electric |
1 / 5 page 1 FMV09N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Symbol Characteristics Unit Remarks Drain-Source Voltage VDS 900 V VDSX 900 V VGS = -30V Continuous Drain Current ID ±9 A Pulsed Drain Current IDP ±36 A Gate-Source Voltage VGS ±30 V Repetitive and Non-Repetitive Maximum AvalancheCurrent IAR 9 A Note*1 Non-Repetitive Maximum Avalanche Energy EAS 565.3 mJ Note*2 Repetitive Maximum Avalanche Energy EAR 8.5 mJ Note*3 Peak Diode Recovery dV/dt dV/dt 2.1 kV/µs Note*4 Peak Diode Recovery -di/dt -di/dt 100 A/µs Note*5 Maximum Power Dissipation PD 2.16 W Ta=25°C 85 Tc=25°C Operating and Storage Temperature range Tch 150 °C Tstg -55 to + 150 °C Outline Drawings [mm] Equivalent circuit schematic Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Symbol Conditions min. typ. max. Unit Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 900 - - V Gate Threshold Voltage VGS (th) ID=250µA, VDS=VGS 3.5 4.0 4.5 V Zero Gate Voltage Drain Current IDSS VDS=900V, VGS=0V Tch=25°C - - 25 µA VDS=720V, VGS=0V Tch=125°C - - 250 Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V - 10 100 nA Drain-Source On-State Resistance RDS (on) ID=4.5A, VGS=10V - 1.16 1.4 Ω Forward Transconductance gfs ID=4.5A, VDS=25V 5.0 10 - S Input Capacitance Ciss VDS=25V VGS=0V f=1MHz - 1700 2550 pF Output Capacitance Coss - 150 225 Reverse Transfer Capacitance Crss - 11 17 Turn-On Time td(on) Vcc=600V VGS=10V ID=4.5A RG=24Ω - 35 53 ns tr - 30 45 Turn-Off Time td(off) - 110 165 tf - 30 45 Total Gate Charge QG Vcc=450V ID=9A VGS=10V - 50 75 nC Gate-Source Charge QGS - 15 23 Gate-Drain Charge QGD - 16 24 Gate-Drain Crossover Charge QSW - 6 9 Avalanche Capability IAV L=5.12mH, Tch=25°C 9 - - A Diode Forward On-Voltage VSD IF=9A, VGS=0V, Tch=25°C - 0.90 1.35 V Reverse Recovery Time trr IF=9A, VGS=0V -di/dt=100A/µs, Tch=25°C - 1.8 - µS Reverse Recovery Charge Qrr - 15 - µC Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS=3.6A, L=80.0mH, Vcc=90V, RG=10Ω EAS limited by maximum channel temperature and avalanche current. See to 'Avalanche current' graph. Thermal Characteristics Description Symbol Test Conditions min. typ. max. Unit Thermal resistance Rth (ch-c) Channel to case 1.471 °C/W Rth (ch-a) Channel to ambient 58.0 °C/W Gate(G) Source(S) Drain(D) Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : IF≤-ID, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C. Note *5 : IF≤-ID, dv/dt=2.1kV/µs, Vcc≤BVDSS, Tch≤150°C. TO-220F(SLS) |
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