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2N5109 Datasheet(PDF) 2 Page - Semicoa Semiconductor

Part No. 2N5109
Description  Type 2N5109 Geometry 1007 Polarity NPN
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Maker  SEMICOA [Semicoa Semiconductor]
Homepage  http://www.semicoa.com/
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2N5109 Datasheet(HTML) 2 Page - Semicoa Semiconductor

   
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Data Sheet No. 2N5109
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
IC = 100 µA
Collector-Emitter Breakdown Voltage
IC = 5 mA
Collector-Emitter Breakdown Voltage
IC = 5 mA, R2 = 10 ohms
Emitter-Base Breakdown Voltage
IE = 100 µA
Collector-Emitter Cutoff Current
VCE = 15 V
Collector-Emitter Cutoff Current
VCE = 15 V, TC = +175
oC
V(BR)CER
40
---
V
ICEO2
---
5.0
mA
ICEO1
---
20
µA
V
V(BR)EBO
3.0
---
V(BR)CEO
20
---
V
Electrical Characteristics
TC = 25
oC unless otherwise specified
V(BR)CBO
40
---
V
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
IC = 50 mA, VCE = 15 V (pulsed)
hFE1
40
150
---
IC = 50 mA, VCE = 5.0 V (pulsed)
hFE2
15
---
---
Collector-Emitter Saturation Voltage
IC = 100 mA, IB = 50 mA (pulsed)
VCE(sat)1
---
0.5
V dc
Small Signal Characteristics
Symbol
Min
Max
Unit
Magnitude of Common Emitter, Small Signal, Short Circuit
Current Transfer Ratio
IC = 25 mA, VCE = 15 V, f = 200 MHz
5.0
10
---
IC = 25 mA, VCE = 15 V, f = 200 MHz
6.0
11
---
IC = 25 mA, VCE = 15 V, f = 200 MHz
5.0
10.5
---
Open Circuit Output Capacitance
VCB = 28 V, IE = 0, 100 kHz < f < 1 MHz
Power Gain (Narrow Band) Current
VCC = 15 V, IC = 50 mA, f = 200 MHz
Cross Modulation
VCC = 15 V, IC = 50 mA, f = 200 MHz
54 dBm V outpuot
Noise Figure
VCC = 15 V, IC = 50 mA, f = 200 MHz
Voltage Gain (Wideband)
VCC = 15 V, IC = 50 mA, f = 50 to 216 MHz
|hFE|
pF
COBO
---
3.5
GPE
11
3.5
dB
cm
---
-57
dB
NF
---
3.5
dB
GVE
11
---
dB


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