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FMR23N50E Datasheet(PDF) 1 Page - Fuji Electric

Part # FMR23N50E
Description  N-CHANNEL SILICON POWER MOSFET
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Manufacturer  FUJI [Fuji Electric]
Direct Link  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

FMR23N50E Datasheet(HTML) 1 Page - Fuji Electric

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FMR23N50E
FUJI POWER MOSFET
Super FAP-E3 series
N-CHANNEL SILICON POWER MOSFET
Features
Maintains both low power loss and low noise
Lower RDS(on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (3.0±0.5V)
High avalanche durability
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Symbol
Characteristics
Unit
Remarks
Drain-Source Voltage
VDS
500
V
VDSX
500
V
VGS = -30V
Continuous Drain Current
ID
±23
A
Pulsed Drain Current
IDP
±92
A
Gate-Source Voltage
VGS
±30
V
Repetitive and Non-Repetitive Maximum Avalanche Current
IAR
23
A
Note*1
Non-Repetitive Maximum Avalanche Energy
EAS
767.3
mJ
Note*2
Repetitive Maximum Avalanche Energy
EAR
15
mJ
Note*3
Peak Diode Recovery dV/dt
dV/dt
9.3
kV/µs
Note*4
Peak Diode Recovery -di/dt
-di/dt
100
A/µs
Note*5
Maximum Power Dissipation
PD
3.13
W
Ta=25°C
150
Tc=25°C
Operating and Storage
Tch
150
°C
Temperature range
Tstg
-55 to + 150
°C
Isolation Voltage
VISO
2
kVrms
t = 60sec, f = 60Hz
Outline Drawings [mm]
Equivalent circuit schematic
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Symbol
Conditions
min.
typ.
max.
Unit
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
500
-
-
V
Gate Threshold Voltage
VGS (th)
ID=250µA, VDS=VGS
2.5
3.0
3.5
V
Zero Gate Voltage Drain Current
IDSS
VDS=500V, VGS=0V
Tch=25°C
-
-
25
µA
VDS=400V, VGS=0V
Tch=125°C
-
-
250
Gate-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
-
10
100
nA
Drain-Source On-State Resistance
RDS (on)
ID=11.5A, VGS=10V
-
0.21
0.245
Forward Transconductance
gfs
ID=11.5A, VDS=25V
14
28
-
S
Input Capacitance
Ciss
VDS=25V
VGS=0V
f=1MHz
-
3500
5250
pF
Output Capacitance
Coss
-
330
495
Reverse Transfer Capacitance
Crss
-
24
36
Turn-On Time
td(on)
Vcc=300V
VGS=10V
ID=11.5A
RGS=5.6Ω
-
24
36
ns
tr
-
13
19.5
Turn-Off Time
td(off)
-
150
225
tf
-
20
30
Qth
Vcc=250V
ID=23A
VGS=10V
-
11
16.5
nC
Total Gate Charge
QG
-
93
139.5
Gate-Source Charge
QGS
-
24
36
Gate-Drain Charge
QGD
-
30
45
Avalanche Capability
IAV
L=1.16mH, Tch=25°C
23
-
-
A
Diode Forward On-Voltage
VSD
IF=23A, VGS=0V, Tch=25°C
-
0.90
1.35
V
Reverse Recovery Time
trr
IF=23A, VGS=0V
-di/dt=100A/µs, Tch=25°C
-
0.5
-
µs
Reverse Recovery Charge
Qrr
-
8
-
µC
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, IAS=10A, L=14.1mH, Vcc=50V, RG=50Ω
EAS limited by maximum channel temperature and avalanche current.
See to 'Avalanche Energy' graph.
Thermal Characteristics
Description
Symbol
Test Conditions
min.
typ.
max.
Unit
Thermal resistance
Rth (ch-c)
Channel to case
0.83
°C/W
Rth (ch-a)
Channel to ambient
40.0
°C/W
Gate(G)
Source(S)
Drain(D)
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
Note *4 : IF≤-ID, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
Note *5 : IF≤-ID, dv/dt=5.0kV/µs, Vcc≤BVDSS, Tch≤150°C.
TO-3PF


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