KMC6D5CN20CA datasheet(2/4 Pages) KEC

Part #	KMC6D5CN20CA

Description	Common N-Ch Trench MOSFET

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Manufacturer	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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2009. 6. 4

2/4

KMC6D5CN20CA

Revision No : 0

ELECTRICAL CHARACTERISTICS (Ta=25

)

Note2) Pulse test : Pulse width

300

, Duty Cycle

2%.

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Drain to Source Breakdown Voltage

BVDSS

VGS=0V, ID=250 A

20

-

V

Drain Cut-off Current

IDSS

VDS=20V, VGS=0V

-

1

A

Gate to Source Leakage Current

IGSS

VGS= 12V, VDS=0V

-

10

A

Gate Threshold Voltage

Vth

VDS=VGS, ID=250 A

0.5

-

1.5

V

Drain to Source On Resistance

RDS(ON)

VGS=4.5V, ID=3.0A

(Note2)

-

21.5

24.0

m

VGS=4.0V, ID=3.0A

(Note2)

-

22.5

25.0

VGS=3.1V, ID=3.0A

(Note2)

-

24.5

27.0

VGS=2.5V, ID=3.0A

(Note2)

-

28.5

32.0

Gate Resistance

Rg

f=1MHz

-

2.5

-

k

Forward Transconductance

gfs

VDS=5V, ID=6.5A

(Note2)

-

28

-

S

Dynamic

Total Gate Charge

Qg

VDS=10V, ID=6.5A

VGS=4.0V

(Note2)

-

4.6

-

nC

Gate to Source Charge

Qgs

-

1.0

-

Gate to Drain Charge

Qgd

-

2.6

-

Turn-On Delay Time

td(on)

VDS=10V, VGS=4.0V

ID=4.0A, RG=6

(Note2)

-

1.0

-

s

Turn-On Rise Time

tr

-

1.8

-

Turn-Off Delay Time

td(off)

-

7.0

-

Turn-Off Fall Time

tf

-

6.0

-

Source to Drain Diode Ratings

Source to Drain Diode Forward Voltage

VSD

VGS=0V, IS=1.7A

(Note2)

-

0.8

1.2

V

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