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FML12N60ES Datasheet(PDF) 3 Page - Fuji Electric |
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FML12N60ES Datasheet(HTML) 3 Page - Fuji Electric |
3 / 5 page 2 3 FUJI POWER MOSFET FML12N60ES http://www.fujisemi.com -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 Tch [˚C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6A,VGS=10V -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 typ. max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS, ID=250µA Tch [˚C] 0 10 20 30 40 50 60 70 0 2 4 6 8 10 12 14 Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=12A, Tch=25˚C 480V 300V Vcc= 120V 10 -2 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 10 4 VDS [V] Typical Capacitance C=f(VDS):VGS=0V, f=1MHz Crss Coss Ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0.1 1 10 100 VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs pulse test, Tch=25˚C 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V, VGS=10V, RG=27Ω td(on) tr tf td(off) ID [A] |
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