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2N4150 Datasheet(PDF) 1 Page - Semicoa Semiconductor |
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2N4150 Datasheet(HTML) 1 Page - Semicoa Semiconductor |
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1 / 2 page  Type 2N4150 Geometry 9201 Polarity NPN Qual Level: JAN - JANTXV Data Sheet No. 2N4150 Generic Part Number: 2N4150 REF: MIL-PRF-19500/394 Features: • Power switching transistor for high speed switching applicatons. • Housed in a TO-5 case. • Also available in chip form using the 9201 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/394 which Semicoa meets in all cases. Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 70 V Collector-Base Voltage VCBO 100 V Emitter-Base Voltage VEBO 10 V Collector Current, Continuous IC 10 A Power Dissipation at 25 oC ambient 1.0 mW Derate above 25 oC 5.7 mW/ oC Power Dissipation at 25 oC ambient 5.0 W Derate above 25 oC 50 mW/ oC RJC 0.020 oC/mW RJA 0.175 oC/mW Operating Junction Temperature TJ -65 to +200 oC Storage Temperature TSTG -65 to +200 oC Thermal Impedance Maximum Ratings TC = 25 oC unless otherwise specified PT PT TO-5 |
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