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2N3960 Datasheet(PDF) 2 Page - Semicoa Semiconductor

Part # 2N3960
Description  Type 2N3960 Geometry 0003 Polarity NPN
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Manufacturer  SEMICOA [Semicoa Semiconductor]
Direct Link  http://www.semicoa.com/
Logo SEMICOA - Semicoa Semiconductor

2N3960 Datasheet(HTML) 2 Page - Semicoa Semiconductor

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Data Sheet No. 2N3960
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
IC = 10 µA
Collector-Emitter Breakdown Voltage
IC = 10 mA
Emitter-Base Breakdown Voltage
IC = 10 µA
Collector-Emitter Cutoff Current
VCE = 10 V, VBE = 0.4 V
ICEX1
---
1.0
µA
VCE = 10 V, VEB = 2.0 V
ICEX2
---
5.0
nA
VCE = 10 V, VEB = 2.0 V, TA = 150
oC
ICEX3
---
5.0
µA
V
V(BR)EBO
4.5
---
V(BR)CEO
12
---
V
Electrical Characteristics
TC = 25
oC unless otherwise specified
V(BR)CBO
20
---
V
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
IC = 1.0 mA, VCE = 1 V
hFE1
40
---
---
IC = 10 mA, VCE = 1 V, pulsed
hFE2
60
300
---
IC = 30 mA, VCE = 1 V, pulsed
hFE3
30
---
---
IC = 10 mA, VCE = 1.0 V, TC = -55
oC
hFE4
30
---
Base-Emitter Saturation Voltage
VCE 1.0 V, IC = 1.0 mA
VBE1
---
0.8
V dc
VCE 1.0 V, IC = 30 mA
VBE2
---
1.0
V dc
Collector-Emitter Saturation Voltage
IC = 1.0 mA, IB = 0.1 mA
VCE(sat)1
---
0.2
V dc
IC = 30 mA, IB = 3.0 mA
VCE(sat)2
---
0.3
V dc
Small Signal Characteristics
Symbol
Min
Max
Unit
Magnitude of Common Emitter, Small Signal, Short Circuit
Forward Current Transfer Ratio
VCE = 4 V, IC = 5.0 mA, f = 100 MHz
|hFE1|
13
---
---
VCE = 4 V, IC = 10 mA, f = 100 MHz
|hFE2|
14
---
---
VCE = 4 V, IC = 30 mA, f = 100 MHz
|hFE3|
12
---
---
Open Circuit Output Capacitance
VCB = 4 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
COBO
---
2.5
pF
CIBO
---
2.5
pF


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