2009. 09. 04

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SEMICONDUCTOR

TECHNICAL DATA

KMB012N30QA

N-Ch Trench MOSFET

Revision No : 0

GENERAL DESCRIPTION

This Trench MOSFET has better characteristics, such as fast switching time, low

on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly

suitable for DC/DC Converter and Battery pack..

FEATURES

Drain to Source On Resistance.

MOSFET Maximum Ratings (Ta=25

Unless otherwise noted)

B2

G

H

B1

1

4

5

8

A

P

D

L

T

FLP-8

0.20+0.1/-0.05

T

P

1.27

MILLIMETERS

DIM

A

4.85

0.2

+

_

B1

3.94

0.2

+

_

B2

6.02

0.3

+

_

D

0.4

0.1

+

_

G

0.15+0.1/-0.05

H

1.63

0.2

+

_

L

0.65

0.2

+

_

Note1) Surface Mounted on 1″ 1″FR4 Board, t

10sec.

1

2

3

4

8

7

6

5

S

S

S

G

D

D

D

D

1

2

3

4

8

7

6

5

KMB012N

30QA

PIN CONNECTION (TOP VIEW)

CHARACTERISTIC

SYMBOL RATING

UNIT

Drain to Source Voltage

30

V

Gate to Source Voltage

20

V

Drain Current

DC@Ta=25

(Note 1)

12

A

Pulsed

(Note 1)

48

A

Drain Power Dissipation

@Ta=25

(Note 1)

2.5

W

Maximum Junction Temperature

150

Storage Temperature Range

-55~150

Thermal Resistance, Junction to Ambient

(Note 1)

50

/W