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2N3507L Datasheet(PDF) 2 Page - Semicoa Semiconductor

Part No. 2N3507L
Description  Type 2N3507L Geometry 1506 Polarity NPN
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Maker  SEMICOA [Semicoa Semiconductor]
Homepage  http://www.semicoa.com/
Logo SEMICOA - Semicoa Semiconductor

2N3507L Datasheet(HTML) 2 Page - Semicoa Semiconductor

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Data Sheet No. 2N3507L
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
IC = 10 µA
Collector-Emitter Breakdown Voltage
IC = 10 mA
Emitter-Base Breakdown Voltage
IE = 10 µA
Collector-Emitter Cutoff Current
VCE = 60 V, VEB = 4 V
Collector-Emitter Cutoff Current
VCE = 60 V, VEB = 4 V, TA = +150
oC
Collector Current Continuous
VCB = 50 V
IC
3.0
---
A
ICEX2
---
1.0
µA
ICEX1
---
1.0
µA
V
V(BR)EBO
5.0
---
V(BR)CEO
50
---
V
Electrical Characteristics
TC = 25
oC unless otherwise specified
V(BR)CBO
80
---
V
ON Characteristics
Symbol
Min
Max
Unit
DC Current Gain
IC = 500 mA, VCE = 1 V (pulsed)
hFE1
35
175
---
IC = 1.5 A, VCE = 2 V (pulsed)
hFE2
30
150
---
IC = 2.5 A, VCE = 3 V (pulsed)
hFE3
25
---
---
IC = 3.0 A, VCE = 5 V (pulsed)
hFE4
20
---
---
IC = 500 mA, VCE= 1 V (pulsed), TA = -55
oC
hFE5
17
---
---
Base-Emitter Saturation Voltage
IC = 500 mA, IB = 50 mA (pulsed)
VBE(sat)1
---
1.0
V dc
IC = 1.5 A, IB = 150 mA (pulsed)
VBE(sat)2
0.9
1.4
V dc
IC = 2.5 A, IB = 250 mA (pulsed)
VBE(sat)3
---
2.0
V dc
Collector-Emitter Saturation Voltage
IC = 500 mA, IB = 50 mA (pulsed)
VCE(sat)1
---
0.5
V dc
IC = 1.5 A, IB = 150 mA (pulsed)
VCE(sat)2
---
1.0
V dc
IC = 2.5 A, IB = 250 mA (pulsed)
VCE(sat)3
---
1.5
V dc
Small Signal Characteristics
Symbol
Min
Max
Unit
Magnitude of Common Emitter, Small Signal, Short Circuit
Forward Current Transfer Ratio
VCE = 5 V, IC = 100 mA, f = 20 MHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 3 V, IC = 0, 100 kHz < f < 1 MHz
pF
CIBO
---
300
pF
COBO
---
40
|hFE|
3.0
15
---
Pulse Response Characteristics
Symbol
Min
Max
Unit
Delay Time
IC = 1.5 A, IB1 = 150 mA
Rise Time
IC = 1.5 A, IB1 = 150 mA
Storage Time
IC = 1.5 mA, IB2 = IB1 = 150 mA
Fall Time
IC = 1.5 mA, IB2 = IB1 = 150 mA
30
ns
tr
---
td
---
15
ns
ts
---
55
ns
tf
---
35
ns


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