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KF3N60P Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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KF3N60P Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
1 / 7 page 2010. 12. 20 1/2 SEMICONDUCTOR TECHNICAL DATA KF3N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR Revision No : 0 General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES ・VDSS= 600V, ID= 3A ・Drain-Source ON Resistance : RDS(ON)=3.3Ω @VGS = 10V ・Qg(typ) = 8.5nC MAXIMUM RATING (Ta=25 ℃) * : Drain current limited by maximum junction temperature. CHARACTERISTIC SYMBOL RATING UNIT KF3N60P KF3N60F Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Drain Current @TC=25℃ ID 3 3* A @TC=100℃ 1.9 1.9* Pulsed (Note1) IDP 7 7* Single Pulsed Avalanche Energy (Note 2) EAS 120 mJ Repetitive Avalanche Energy (Note 1) EAR 3.2 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Drain Power Dissipation Tc=25 ℃ PD 73 31 W Derate above 25 ℃ 0.58 0.25 W/ ℃ Maximum Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55 ~150 ℃ Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 1.7 4 ℃/W Thermal Resistance, Junction-to- Ambient RthJA 62.5 62.5 ℃/W G D S PIN CONNECTION DIM MILLIMETERS TO-220AB 1.46 A B C D E F G H J K M N O 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 MAX 1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 A F B J G K M L L E I I O C H NN Q D Q P P 1. GATE 2. DRAIN 3. SOURCE 12 3 KF3N60P TO-220IS (1) A A B C C D D E E F G H H 1.47 MAX 1.47 MAX J K L M L N NN O Q R R 12 3 M DIM MILLIMETERS 10.16 0.2 + _ 15.87 0.2 + _ 2.54 0.2 + _ 0.8 0.1 + _ 3.18 0.1 + _ 0.5 0.1 + _ 3.23 0.1 + _ 13.0 0.5 + _ 2.54 0.2 + _ 4.7 0.2 + _ 6.68 0.2 + _ 2.76 0.2 + _ 3.3 0.1 + _ 12.57 0.2 + _ 1. GATE 2. DRAIN 3. SOURCE * Single Gauge Lead Frame KF3N60F (KF3N60P, KF3N60F) |
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