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2N2857 Datasheet(PDF) 2 Page - Semicoa Semiconductor

Part No. 2N2857
Description  Type 2N2857 Geometry 0011 Polarity NPN
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Maker  SEMICOA [Semicoa Semiconductor]
Homepage  http://www.semicoa.com/
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2N2857 Datasheet(HTML) 2 Page - Semicoa Semiconductor

   
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Data Sheet No. 2N2857
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
IC = 1 µA
Collector-Emitter Breakdown Voltage
IC = 3 mA
Emitter-Base Breakdown Voltage
IE = 10 µA
Collector-Emitter Cutoff Current
VCB = 15 V
Collector-Base Cutoff Current
VCB = 15 V
ICBO
---
10
ICES
---
100
3.0
---
---
V(BR)CEO
15
---
nA
V
Electrical Characteristics
TC = 25
oC unless otherwise specified
V
V
nA
V(BR)CBO
30
V(BR)EBO
ON Characteristics
Symbol
Min
Max
Unit
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1 mA
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 1 mA
---
0.4
V dc
VBE(sat)
---
1.0
V dc
VCE(sat)
Small Signal Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
IC = 3 mA, VCE = 1 V
hFE
30
150
---
IC = 2 mA, VCE = 6 V, case lead floating
hFE
50
220
---
Magnitude of Common Emitter Short Circuit
Forward Current Transfer Ratio
VCE = 6 V, IC = 5 mA, f = 100 MHz
Small Signal Power Gain
GPE
12.5
21
dB
Collector-Base Feedback Capacitance
VCB = 10 V, IE = 2 mA, 100 kHz < f < 1 MHz
Collector-Base Time Constant
VCE = 6 V, IE = 2 mA, f = 31.9 MHz
Noise Figure
VCE = 6 V, IC = 1.5 mA,rg = 50 ohms, 450 MHz
rb'CC
4.0
15
ps
NF
---
4.5
dB
pF
|hFE|
10
21
---
CCB
---
1.0


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