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2SK3474-01 Datasheet(PDF) 1 Page - Fuji Electric |
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2SK3474-01 Datasheet(HTML) 1 Page - Fuji Electric |
1 / 4 page 1 Item Symbol Ratings Unit Remarks Drain-source voltage VDS 150 VDSX 120 Continuous drain current ID ±33 ±4.1 *4 Pulsed drain current ID(puls] ±132 Gate-source voltage VGS ±30 Repetitive or non-repetitive IAR *2 33 Maximum Avalanche Energy EAS *1 169 Maximum Drain-Source dV/dt dVDS/dt 20 Peak Diode Recovery dV/dt dV/dt *3 5 Max. power dissipation PD 2.4 *4 150 Operating and storage Tch +150 temperature range Tstg Electrical characteristics atTc =25°C ( unless otherwise specified) Thermalcharacteristics 2SK3474-01 FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications for Switching Absolute Maximum Ratings at Tc=25°C ( unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=150V VGS=0V VDS=120V VGS=0V VGS=±30V ID=11.5A VGS=10V ID=11.5A VDS=25V VCC=48V ID=11.5A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA m Ω S pF nC A V µs µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient Rth(ch-a) *4 channel to ambient 0.833 87.0 52.0 °C/W °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID=250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=75V VGS=0V f=1MHz VCC=48V ID=23A VGS=10V L=228 µH Tch=25°C IF=23A VGS=0V Tch=25°C IF=23A VGS=0V -di/dt=100A/µs Tch=25°C V V A A A V A mJ kV/µs kV/µs W W °C °C 150 3.0 5.0 25 250 10 100 54 70 816 1500 1730 200 300 17 26 13 20 15 23 34 51 15 23 34 51 9 13.5 12.5 19 33 1.10 1.60 0.13 0.6 -55 to +150 Outline Drawings [mm] Equivalent circuit schematic Super FAP-G Series Foot Print Pattern (1) Gate(G) (3) Source(S) [power line] (4) Drain(D) (2) Source(S) [signal line] VGS=30V Ta=25°C VDS 150V Ta=25°C = < *4 Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area:500mm2) *3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C = < = < = < *1 L=0.228mH, Vcc=48V, See to Avalanche Energy Graph *2 Tch 150°C = < |
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