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CY62187EV30LL Datasheet(PDF) 9 Page - Cypress Semiconductor

Part # CY62187EV30LL
Description  64-Mbit (4 M x 16) Static RAM Ultra low standby power
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62187EV30LL Datasheet(HTML) 9 Page - Cypress Semiconductor

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CY62187EV30 MoBL®
Document Number: 001-48998 Rev. *F
Page 9 of 15
Figure 6. Write Cycle 1 (WE Controlled) [21, 22, 23, 24]
Figure 7. Write Cycle 2 (CE1 or CE2 Controlled)
[21, 22, 23, 24]
Switching Waveforms (continued)
t
HD
t
SD
t
PWE
t
SA
t
HA
t
AW
t
SCE
t
WC
t
HZOE
VALID DATA
t
BW
NOTE 24
ADDRESS
WE
DATA I/O
OE
BHE
/BLE
CE1
CE2
t
HD
t
SD
tPWE
t
HA
t
AW
t
SCE
t
WC
t
HZOE
VALID DATA
NOTE 24
t
BW
tSA
ADDRESS
WE
DATA I/O
OE
BHE
/BLE
CE1
CE2
Notes
21. The internal Write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE and/or BLE = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write
and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates
the write.
22. Data I/O is high impedance if OE = VIH.
23. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high impedance state.
24. During this period the I/Os are in output state and input signals should not be applied.
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