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CY62187EV30LL Datasheet(PDF) 9 Page - Cypress Semiconductor |
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CY62187EV30LL Datasheet(HTML) 9 Page - Cypress Semiconductor |
9 / 15 page CY62187EV30 MoBL® Document Number: 001-48998 Rev. *F Page 9 of 15 Figure 6. Write Cycle 1 (WE Controlled) [21, 22, 23, 24] Figure 7. Write Cycle 2 (CE1 or CE2 Controlled) [21, 22, 23, 24] Switching Waveforms (continued) t HD t SD t PWE t SA t HA t AW t SCE t WC t HZOE VALID DATA t BW NOTE 24 ADDRESS WE DATA I/O OE BHE /BLE CE1 CE2 t HD t SD tPWE t HA t AW t SCE t WC t HZOE VALID DATA NOTE 24 t BW tSA ADDRESS WE DATA I/O OE BHE /BLE CE1 CE2 Notes 21. The internal Write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE and/or BLE = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write. 22. Data I/O is high impedance if OE = VIH. 23. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high impedance state. 24. During this period the I/Os are in output state and input signals should not be applied. [+] Feedback |
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