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CY62167E Datasheet(PDF) 10 Page - Cypress Semiconductor |
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CY62167E Datasheet(HTML) 10 Page - Cypress Semiconductor |
10 / 17 page CY62167E MoBL® Document Number: 001-15607 Rev. *C Page 10 of 17 Figure 6. Write Cycle No. 2 (CE1 or CE2 Controlled).[29, 30, 31] Figure 7. Write Cycle No. 3 (WE Controlled, OE LOW) [31] Switching Waveforms (continued) tHD tSD tPWE tHA tAW tSCE tWC tHZOE VALID DATA tBW tSA NOTE 32 CE1 ADDRESS CE2 WE DATA I/O OE BHE/BLE VALID DATA tHD tSD tLZWE tPWE tSA tHA tAW tSCE tWC tHZWE tBW NOTE 32 CE1 ADDRESS CE2 WE DATA I/O BHE/BLE Notes 29. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE or BLE or both = VIL, and CE2 = VIH. All signals must be active to initiate a write and any of these signals can terminate a write by going inactive. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write. 30. Data I/O is high impedance if OE = VIH. 31. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high impedance state. 32. During this period the I/Os are in output state and input signals must not be applied. [+] Feedback |
Similar Part No. - CY62167E_11 |
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Similar Description - CY62167E_11 |
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