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CY62167E Datasheet(PDF) 10 Page - Cypress Semiconductor

Part # CY62167E
Description  16-Mbit (1 M x 16 / 2 M x 8) Static RAM Automatic power-down when deselected
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62167E Datasheet(HTML) 10 Page - Cypress Semiconductor

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CY62167E MoBL®
Document Number: 001-15607 Rev. *C
Page 10 of 17
Figure 6. Write Cycle No. 2 (CE1 or CE2 Controlled).[29, 30, 31]
Figure 7. Write Cycle No. 3 (WE Controlled, OE LOW) [31]
Switching Waveforms (continued)
tHD
tSD
tPWE
tHA
tAW
tSCE
tWC
tHZOE
VALID DATA
tBW
tSA
NOTE 32
CE1
ADDRESS
CE2
WE
DATA I/O
OE
BHE/BLE
VALID DATA
tHD
tSD
tLZWE
tPWE
tSA
tHA
tAW
tSCE
tWC
tHZWE
tBW
NOTE 32
CE1
ADDRESS
CE2
WE
DATA I/O
BHE/BLE
Notes
29. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE or BLE or both = VIL, and CE2 = VIH. All signals must be active to initiate
a write and any of these signals can terminate a write by going inactive. The data input setup and hold timing should be referenced to the edge of the signal
that terminates the write.
30. Data I/O is high impedance if OE = VIH.
31. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high impedance state.
32. During this period the I/Os are in output state and input signals must not be applied.
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