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CY62158ELL-45ZSXI Datasheet(PDF) 9 Page - Cypress Semiconductor |
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CY62158ELL-45ZSXI Datasheet(HTML) 9 Page - Cypress Semiconductor |
9 / 16 page CY62158E MoBL® Document #: 38-05684 Rev. *H Page 9 of 16 Figure 6. Write Cycle No. 1 (WE Controlled) [20, 21, 22] Figure 7. Write Cycle No. 2 (CE1 or CE2 Controlled) [20, 21, 22] Switching Waveforms (continued) tHD tSD tPWE tSA tHA tAW tSCE tWC tHZOE VALID DATA NOTE 23 CE1 ADDRESS CE2 WE DATA I/O OE tWC VALID DATA tAW tSA tPWE tHA tHD tSD tSCE CE1 ADDRESS CE2 WE DATA I/O OE Notes 20. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write. 21. Data I/O is high impedance if OE = VIH. 22. If CE1 goes HIGH or CE2 goes LOW simultaneously with WE HIGH, the output remains in high impedance state. 23. During this period, the I/Os are in output state. Do not apply input signals. [+] Feedback |
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