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CY62158ELL-45ZSXI Datasheet(PDF) 9 Page - Cypress Semiconductor

Part # CY62158ELL-45ZSXI
Description  8-Mbit (1 M x 8) Static RAM Automatic power down when deselected
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62158ELL-45ZSXI Datasheet(HTML) 9 Page - Cypress Semiconductor

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CY62158E MoBL®
Document #: 38-05684 Rev. *H
Page 9 of 16
Figure 6. Write Cycle No. 1 (WE Controlled) [20, 21, 22]
Figure 7. Write Cycle No. 2 (CE1 or CE2 Controlled) [20, 21, 22]
Switching Waveforms (continued)
tHD
tSD
tPWE
tSA
tHA
tAW
tSCE
tWC
tHZOE
VALID DATA
NOTE 23
CE1
ADDRESS
CE2
WE
DATA I/O
OE
tWC
VALID DATA
tAW
tSA
tPWE
tHA
tHD
tSD
tSCE
CE1
ADDRESS
CE2
WE
DATA I/O
OE
Notes
20. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these signals
can terminate a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write.
21. Data I/O is high impedance if OE = VIH.
22. If CE1 goes HIGH or CE2 goes LOW simultaneously with WE HIGH, the output remains in high impedance state.
23. During this period, the I/Os are in output state. Do not apply input signals.
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