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CY62157ELL-55BVXE Datasheet(PDF) 4 Page - Cypress Semiconductor |
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CY62157ELL-55BVXE Datasheet(HTML) 4 Page - Cypress Semiconductor |
4 / 18 page CY62157E MoBL® Document #: 38-05695 Rev. *H Page 4 of 18 Maximum Ratings Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested. Storage Temperature ............................. –65 °C to + 150 °C Ambient Temperature with Power Applied ........................................ –55 °C to + 125 °C Supply Voltage to Ground Potential .........................................................–0.5 V to 6.0 V DC Voltage Applied to Outputs in High Z State[4, 5] .........................................–0.5 V to 6.0 V DC Input Voltage[4, 5] ..................................... –0.5 V to 6.0 V Output Current into Outputs (LOW) ............................20 mA Static Discharge Voltage ........................................> 2001 V (MIL-STD-883, Method 3015) Latch up Current ....................................................> 200 mA Operating Range Device Range Ambient Temperature VCC[6] CY62157ELL Industrial –40 °C to +85 °C 4.5 V to 5.5 V Automotive –40 °C to +125 °C Electrical Characteristics Over the Operating Range Parameter Description Test Conditions 45 ns (Industrial) 55 ns (Automotive) Unit Min Typ[7] Max Min Typ[7] Max VOH Output HIGH Voltage IOH = –1 mA 2.4 – – 2.4 – – V VOL Output LOW Voltage IOL = 2.1 mA – – 0.4 – – 0.4 V VIH Input HIGH Voltage VCC = 4.5 V to 5.5 V 2.2 – VCC + 0.5 2.2 – VCC + 0.5 V VIL Input LOW Voltage VCC = 4.5 V to 5.5 V –0.5 – 0.8 –0.5 – 0.8 V IIX Input Leakage Current GND < VI < VCC –1 – +1 –4 – +4 A IOZ Output Leakage Current GND < VO < VCC, Output Disabled –1 – +1 –4 – +4 A ICC VCC Operating Supply Current f = fmax = 1/tRC VCC = VCC(max) IOUT = 0 mA CMOS levels – 18 25 – 18 35 mA f = 1 MHz – 1.8 3 – 1.8 4 ISB1 [8] Automatic CE Power Down Current — CMOS Inputs CE1 > VCC 0.2 V or CE2 < 0.2 V or (BHE and BLE) > VCC – 0.2 V, VIN > VCC – 0.2 V, VIN < 0.2 V, f = fmax (Address and Data Only), f = 0 (OE and WE), VCC = VCC(max) – 28– 2 30 A ISB2 [8] Automatic CE Power Down Current — CMOS Inputs CE1 > VCC – 0.2 V or CE2 < 0.2 V or (BHE and BLE) > VCC – 0.2 V, VIN > VCC – 0.2 V or VIN < 0.2 V, f = 0, VCC = VCC(max) – 28– 2 30 A Notes 4. VIL(min) = –2.0 V for pulse durations less than 20 ns for I < 30 mA. 5. VIH(max) = VCC + 0.75 V for pulse durations less than 20 ns. 6. Full device AC operation assumes a 100 s ramp time from 0 to VCC(min) and 200 s wait time after VCC stabilization. 7. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C. 8. Chip enables (CE1 and CE2) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the ISB1 / ISB2 / ICCDR spec. Other inputs can be left floating. [+] Feedback |
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