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CY62157ESL Datasheet(PDF) 10 Page - Cypress Semiconductor |
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CY62157ESL Datasheet(HTML) 10 Page - Cypress Semiconductor |
10 / 16 page CY62157ESL MoBL Document #: 001-43141 Rev. *C Page 10 of 16 Figure 8. Write Cycle 3: WE controlled, OE LOW [26, 27, 28] Figure 9. Write Cycle 4: BHE/BLE Controlled, OE LOW [26, 27, 28] Switching Waveforms (continued) DATAIN tHD tSD tLZWE tPWE tSA tHA tAW tSCE tWC tHZWE tBW NOTE 29 CE ADDRESS WE DATA I/O BHE/BLE tHD tSD tSA tHA tAW tWC DATAIN tBW tSCE tPWE tHZWE tLZWE NOTE 29 DATA I/O ADDRESS CE WE BHE/BLE Notes 26. The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE, BLE or both = VIL. All signals must be active to initiate a write and any of these signals can terminate a write by going inactive. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write. 27. Data I/O is high impedance if OE = VIH. 28. If CE goes HIGH simultaneously with WE = VIH, the output remains in a high impedance state. 29. During this period, the I/Os are in output state. Do not apply input signals. |
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