Cypress Semiconductor Corporation

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198 Champion Court

•

San Jose

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408-943-2600

Document #: 38-05577 Rev. *D

Revised June 16, 2011

2-Mbit (256 K × 8) MoBL® Static RAM

Features

optimum speed and power

Functional Description

The CY62138EV30 is a high performance CMOS static RAM

organized as 256K words by eight bits. This device features

advanced circuit design to provide ultra low active current. This

applications such as cellular telephones. The device also has an

automatic power down feature that significantly reduces power

consumption. The device can be put into standby mode reducing

power consumption when deselected (CE HIGH).

Writing to the device is accomplished by taking Chip Enable (CE)

and Write Enable (WE) inputs LOW. Data on the eight I/O pins

Reading from the device is accomplished by taking Chip Enable

(CE) and Output Enable (OE) LOW while forcing Write Enable

(WE) HIGH. Under these conditions, the contents of the memory

location specified by the address pins appear on the I/O pins.

a high impedance state when the device is deselected (CE

HIGH), the outputs are disabled (OE HIGH), or during a write

operation (CE LOW and WE LOW).

COLUMN

DECODER

Data in Drivers

POWER

DOWN

WE

OE

256K x 8

ARRAY

CE

Logic Block Diagram

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