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CY62136EV30_1106 Datasheet(PDF) 9 Page - Cypress Semiconductor |
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CY62136EV30_1106 Datasheet(HTML) 9 Page - Cypress Semiconductor |
9 / 16 page CY62136EV30 MoBL® Document #: 38-05569 Rev. *E Page 9 of 16 Figure 7. Write Cycle No. 1: WE Controlled [23, 24, 25] Figure 8. Write Cycle No. 2: CE Controlled [23, 24, 25] Switching Waveforms (continued) tHD tSD tPWE tSA tHA tAW tWC DATA I/O ADDRESS CE WE OE tHZOE DATAIN NOTE 26 BHE/BLE tBW tSCE tHD tSD tPWE tHA tAW tSCE tWC tHZOE DATAIN CE ADDRESS WE DATA I/O OE NOTE 26 BHE/BLE tBW tSA Notes 23. The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE and BLE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write. 24. Data I/O is high impedance if OE = VIH. 25. If CE goes HIGH simultaneously with WE = VIH, the output remains in a high impedance state. 26. During this period, the I/Os are in output state and input signals should not be applied. [+] Feedback |
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