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CY14B104NA-ZS20XIT Datasheet(PDF) 9 Page - Cypress Semiconductor

Part # CY14B104NA-ZS20XIT
Description  4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY14B104NA-ZS20XIT Datasheet(HTML) 9 Page - Cypress Semiconductor

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CY14B104LA, CY14B104NA
Document #: 001-49918 Rev. *I
Page 9 of 25
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65
C to +150 C
Maximum accumulated storage time
At 150
C ambient temperature ...................... 1000 h
At 85
C ambient temperature ..................... 20 Years
Ambient temperature with
power applied .......................................... –55
C to +150 C
Supply voltage on VCC relative to VSS ...........–0.5 V to 4.1 V
Voltage applied to outputs
in high Z state ..................................... –0.5 V to VCC + 0.5 V
Input voltage ........................................–0.5 V to Vcc + 0.5 V
Transient voltage (< 20 ns) on
any pin to ground potential ................. –2.0 V to VCC + 2.0 V
Package power dissipation
capability (TA = 25 °C) ................................................. 1.0 W
Surface mount Pb soldering
temperature (3 Seconds) ......................................... +260
C
DC output current (1 output at a time, 1s duration) .... 15 mA
Static discharge voltage
(per MIL-STD-883, Method 3015) .......................... > 2001 V
Latch up current ..................................................... > 200 mA
Operating Range
Range
Ambient Temperature
VCC
Industrial
–40
C to +85 C
2.7 V to 3.6 V
DC Electrical Characteristics
Over the Operating Range (VCC = 2.7 V to 3.6 V)
Parameter
Description
Test Conditions
Min
Typ [15]
Max
Unit
VCC
Power supply
2.7
3.0
3.6
V
ICC1
Average VCC current
tRC = 20 ns
tRC = 25 ns
tRC = 45 ns
Values obtained without output loads
(IOUT = 0 mA)
––
70
70
52
mA
mA
mA
ICC2
Average VCC current during
STORE
All inputs don’t care, VCC = Max
Average current for duration tSTORE
––
10
mA
ICC3
Average VCC current at
tRC= 200 ns, VCC(Typ), 25 °C
All inputs cycling at CMOS levels.
Values obtained without output loads
(IOUT = 0 mA).
–35–
mA
ICC4
Average VCAP current during
AutoStore cycle
All inputs don’t care. Average current
for duration tSTORE
––5
mA
ISB
VCC standby current
CE > (VCC – 0.2 V).
VIN < 0.2 V or > (VCC – 0.2 V).
Standby current level after
non-volatile cycle is complete.
Inputs are static. f = 0 MHz.
––5
mA
IIX[16]
Input leakage current (except
HSB)
VCC = Max, VSS < VIN < VCC
–1
+1
A
Input leakage current (for HSB)VCC = Max, VSS < VIN < VCC
–100
+1
A
IOZ
Off-state output leakage current VCC = Max, VSS < VOUT < VCC,
CE or OE > VIH or BHE/BLE > VIH or
WE < VIL
–1
+1
A
VIH
Input HIGH voltage
2.0
VCC + 0.5
V
VIL
Input LOW voltage
Vss – 0.5
0.8
V
VOH
Output HIGH voltage
IOUT = –2 mA
2.4
V
VOL
Output LOW voltage
IOUT = 4 mA
0.4
V
VCAP[17]
Storage capacitor
Between VCAP pin and VSS, 5 V rated
61
68
180
F
Notes
15. Typical values are at 25 °C, VCC = VCC(Typ). Not 100% tested.
16. The HSB pin has IOUT = –2 µA for VOH of 2.4 V when both active HIGH and LOW drivers are disabled. When they are enabled standard VOH and VOL are valid. This
parameter is characterized but not tested.
17. Min VCAP value guarantees that there is a sufficient charge available to complete a successful AutoStore operation. Max VCAP value guarantees that the capacitor
on VCAP is charged to a minimum voltage during a Power-Up RECALL cycle so that an immediate power-down cycle can complete a successful AutoStore. Therefore
it is always recommended to use a capacitor within the specified min and max limits. Refer application note AN43593 for more details on VCAP options.
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