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SML60B18 Datasheet(PDF) 2 Page - Seme LAB

Part No. SML60B18
Description  N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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Maker  SEME-LAB [Seme LAB]
Homepage  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

SML60B18 Datasheet(HTML) 2 Page - Seme LAB

  SML60B18 Datasheet HTML 1Page - Seme LAB SML60B18 Datasheet HTML 2Page - Seme LAB  
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SML60B18
6/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
18
72
1.3
440
7
IS
ISM
VSD
trr
Qrr
(Body Diode)
(Body Diode)
VGS = 0V , IS = – ID [Cont.]
IS = – ID [Cont.] , dls / dt = 100A/ms
IS = – ID [Cont.] , dls / dt = 100A/ms
Continuous Source Current
Pulsed Source Current1
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
mC
Characteristic
Min.
Typ.
Max. Unit
0.45
40
RqJC
RqJA
Junction to Case
Junction to Ambient
°C/W
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
mS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.6W
pF
nC
ns
3450
412
153
138
19
65
12
8
44
9
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
BVDSS
IDSS
IGSS
VGS(TH)
ID(ON)
RDS(ON)
VGS = 0V , ID = 250mA
VDS = VDSS
VDS = 0.8VDSS , TC = 125°C
VGS = ±30V , VDS = 0V
VDS = VGS , ID = 1.0mA
VDS > ID(ON) x RDS(ON) Max
VGS = 10V
VGS = 10V , ID = 0.5 ID [Cont.]
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
(VGS = 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
On State Drain Current 2
Drain – Source On State Resistance 2
600
25
250
±100
2
4
18
0.35
V
mA
nA
V
A
W
STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
DYNAMIC CHARACTERISTICS


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