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SML60B18 Datasheet(PDF) 2 Page - Seme LAB |
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SML60B18 Datasheet(HTML) 2 Page - Seme LAB |
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SML60B18 6/99 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Characteristic Test Conditions Min. Typ. Max. Unit Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Test Conditions Min. Typ. Max. Unit 18 72 1.3 440 7 IS ISM VSD trr Qrr (Body Diode) (Body Diode) VGS = 0V , IS = – ID [Cont.] IS = – ID [Cont.] , dls / dt = 100A/ms IS = – ID [Cont.] , dls / dt = 100A/ms Continuous Source Current Pulsed Source Current1 Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge A V ns mC Characteristic Min. Typ. Max. Unit 0.45 40 RqJC RqJA Junction to Case Junction to Ambient °C/W SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS THERMAL CHARACTERISTICS 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380 mS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge3 Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time Turn-off Delay Time Fall Time VGS = 0V VDS = 25V f = 1MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C RG = 1.6W pF nC ns 3450 412 153 138 19 65 12 8 44 9 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Characteristic Test Conditions Min. Typ. Max. Unit BVDSS IDSS IGSS VGS(TH) ID(ON) RDS(ON) VGS = 0V , ID = 250mA VDS = VDSS VDS = 0.8VDSS , TC = 125°C VGS = ±30V , VDS = 0V VDS = VGS , ID = 1.0mA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] Drain – Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0V) Gate – Source Leakage Current Gate Threshold Voltage On State Drain Current 2 Drain – Source On State Resistance 2 600 25 250 ±100 2 4 18 0.35 V mA nA V A W STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) DYNAMIC CHARACTERISTICS |
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