Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

CY7C1561KV18 Datasheet(PDF) 9 Page - Cypress Semiconductor

Part # CY7C1561KV18
Description  72-Mbit QDR II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
Download  29 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1561KV18 Datasheet(HTML) 9 Page - Cypress Semiconductor

Back Button CY7C1561KV18 Datasheet HTML 5Page - Cypress Semiconductor CY7C1561KV18 Datasheet HTML 6Page - Cypress Semiconductor CY7C1561KV18 Datasheet HTML 7Page - Cypress Semiconductor CY7C1561KV18 Datasheet HTML 8Page - Cypress Semiconductor CY7C1561KV18 Datasheet HTML 9Page - Cypress Semiconductor CY7C1561KV18 Datasheet HTML 10Page - Cypress Semiconductor CY7C1561KV18 Datasheet HTML 11Page - Cypress Semiconductor CY7C1561KV18 Datasheet HTML 12Page - Cypress Semiconductor CY7C1561KV18 Datasheet HTML 13Page - Cypress Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 9 / 29 page
background image
CY7C1561KV18
CY7C1576KV18
CY7C1565KV18
Document Number: 001-15878 Rev. *L
Page 9 of 29
Functional Overview
The CY7C1561KV18, CY7C1576KV18, CY7C1565KV18 are
synchronous pipelined Burst SRAMs equipped with a read port
and a write port. The read port is dedicated to read operations
and the write port is dedicated to write operations. Data flows into
the SRAM through the write port and flows out through the read
port. These devices multiplex the address inputs to minimize the
number of address pins required. By having separate read and
write ports, the QDR II+ completely eliminates the need to
“turnaround” the data bus and avoids any possible data
contention, thereby simplifying system design. Each access
consists of four 8-bit data transfers in the case of
CY7C1561KV18, four 9-bit data transfers in the case of
CY7C1576KV18, and four 36-bit data transfers in the case of
CY7C1565KV18, in two clock cycles.
These devices operate with a read latency of two and half cycles
when DOFF pin is tied HIGH. When DOFF pin is set LOW or
connected to VSS then device behaves in QDR I mode with a
read latency of one clock cycle.
Accesses for both ports are initiated on the positive input clock
(K). All synchronous input and output timing are referenced from
the rising edge of the input clocks (K and K).
All synchronous data inputs (D[x:0]) pass through input registers
controlled by the input clocks (K and K). All synchronous data
outputs (Q[x:0]) outputs pass through output registers controlled
by the rising edge of the input clocks (K and K) as well.
All synchronous control (RPS, WPS, NWS[x:0], BWS[x:0]) inputs
pass through input registers controlled by the rising edge of the
input clocks (K and K).
CY7C1565KV18 is described in the following sections. The
same basic descriptions apply to CY7C1561KV18, and
CY7C1576KV18.
Read Operations
The CY7C1565KV18 is organized internally as four arrays of
512K × 36. Accesses are completed in a burst of four sequential
36-bit data words. Read operations are initiated by asserting
RPS active at the rising edge of the positive input clock (K). The
address presented to the address inputs is stored in the read
address register. Following the next two K clock rise, the corre-
sponding lowest order 36-bit word of data is driven onto the
Q[35:0] using K as the output timing reference. On the subse-
quent rising edge of K, the next 36-bit data word is driven onto
the Q[35:0]. This process continues until all four 36-bit data words
have been driven out onto Q[35:0]. The requested data is valid
0.45 ns from the rising edge of the input clock (K or K). To
maintain the internal logic, each read access must be allowed to
complete. Each read access consists of four 36-bit data words
and takes two clock cycles to complete. Therefore, read
accesses to the device can not be initiated on two consecutive
K clock rises. The internal logic of the device ignores the second
read request. Read accesses can be initiated on every other K
clock rise. Doing so pipelines the data flow such that data is
transferred out of the device on every rising edge of the input
clocks (K and K).
When the read port is deselected, the CY7C1565KV18 first
completes the pending read transactions. Synchronous internal
circuitry automatically tri-states the outputs following the next
rising edge of the negative input clock (K). This enables for a
seamless transition between devices without the insertion of wait
states in a depth expanded memory.
Write Operations
Write operations are initiated by asserting WPS active at the
rising edge of the positive input clock (K). On the following K
clock rise the data presented to D[35:0] is latched and stored into
the lower 36-bit write data register, provided BWS[3:0] are both
asserted active. On the subsequent rising edge of the negative
input clock (K) the information presented to D[35:0] is also stored
into the write data register, provided BWS[3:0] are both asserted
active. This process continues for one more cycle until four 36-bit
words (a total of 144 bits) of data are stored in the SRAM. The
144 bits of data are then written into the memory array at the
specified location. Therefore, write accesses to the device can
not be initiated on two consecutive K clock rises. The internal
logic of the device ignores the second write request. Write
accesses can be initiated on every other rising edge of the
positive input clock (K). Doing so pipelines the data flow such
that 36 bits of data can be transferred into the device on every
rising edge of the input clocks (K and K).
When deselected, the write port ignores all inputs after the
pending write operations have been completed.
Byte Write Operations
Byte write operations are supported by the CY7C1565KV18. A
write operation is initiated as described in the Write Operations
section. The bytes that are written are determined by BWS0,
BWS1, BWS2, and BWS3 which are sampled with each set of
36-bit data words. Asserting the appropriate Byte Write Select
input during the data portion of a write latches the data being
presented and writes it into the device. Deasserting the Byte
Write Select input during the data portion of a write enables the
data stored in the device for that byte to remain unaltered. This
feature can be used to simplify read, modify, or write operations
to a byte write operation.
Concurrent Transactions
The read and write ports on the CY7C1565KV18 operates
completely independently of one another. As each port latches
the address inputs on different clock edges, the user can read or
write to any location, regardless of the transaction on the other
port. If the ports access the same location when a read follows a
write in successive clock cycles, the SRAM delivers the most
recent information associated with the specified address
location. This includes forwarding data from a write cycle that
was initiated on the previous K clock rise.
Read access and write access must be scheduled such that one
transaction is initiated on any clock cycle. If both ports are
selected on the same K clock rise, the arbitration depends on the
previous state of the SRAM. If both ports are deselected, the
read port takes priority. If a read was initiated on the previous
cycle, the write port takes priority (as read operations cannot be
initiated on consecutive cycles). If a write was initiated on the
previous cycle, the read port takes priority (as write operations
can not be initiated on consecutive cycles). Therefore, asserting
both port selects active from a deselected state results in alter-
nating read or write operations being initiated, with the first
access being a read.
[+] Feedback


Similar Part No. - CY7C1561KV18

ManufacturerPart #DatasheetDescription
logo
Cypress Semiconductor
CY7C1561KV18 CYPRESS-CY7C1561KV18 Datasheet
833Kb / 28P
   72-Mbit QDR-II SRAM 4-Word Burst Architecture
CY7C1561KV18-400BZC CYPRESS-CY7C1561KV18-400BZC Datasheet
833Kb / 28P
   72-Mbit QDR-II SRAM 4-Word Burst Architecture
CY7C1561KV18-400BZI CYPRESS-CY7C1561KV18-400BZI Datasheet
833Kb / 28P
   72-Mbit QDR-II SRAM 4-Word Burst Architecture
CY7C1561KV18-400BZXC CYPRESS-CY7C1561KV18-400BZXC Datasheet
833Kb / 28P
   72-Mbit QDR-II SRAM 4-Word Burst Architecture
CY7C1561KV18-400BZXI CYPRESS-CY7C1561KV18-400BZXI Datasheet
833Kb / 28P
   72-Mbit QDR-II SRAM 4-Word Burst Architecture
More results

Similar Description - CY7C1561KV18

ManufacturerPart #DatasheetDescription
logo
Cypress Semiconductor
CY7C1561V18 CYPRESS-CY7C1561V18_08 Datasheet
676Kb / 28P
   72-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1561V18 CYPRESS-CY7C1561V18 Datasheet
1Mb / 28P
   72-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1541V18 CYPRESS-CY7C1541V18 Datasheet
1Mb / 28P
   72-Mbit QDR??II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
logo
Renesas Technology Corp
RMQSAA3636DGBA RENESAS-RMQSAA3636DGBA_15 Datasheet
832Kb / 30P
   36-Mbit QDR??II SRAM 4-word Burst Architecture (2.5 Cycle Read latency)
logo
Cypress Semiconductor
CY7C1541V18 CYPRESS-CY7C1541V18_08 Datasheet
665Kb / 28P
   72-Mbit QDR??II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1261V18 CYPRESS-CY7C1261V18 Datasheet
1Mb / 28P
   36-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1161V18 CYPRESS-CY7C1161V18 Datasheet
1Mb / 29P
   18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
logo
Renesas Technology Corp
RMQSAA3636DGBA RENESAS-RMQSAA3636DGBA Datasheet
363Kb / 30P
   36-Mbit QDR™ II SRAM 4-word Burst Architecture (2.5 Cycle Read latency)
May 25, 2015
logo
Cypress Semiconductor
CY7C15632KV18 CYPRESS-CY7C15632KV18_12 Datasheet
783Kb / 30P
   72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1566KV18 CYPRESS-CY7C1566KV18_11 Datasheet
921Kb / 31P
   72-Mbit DDR II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com