SML50H24

6/99

Drain – Source Voltage

Continuous Drain Current

Gate – Source Voltage

Gate – Source Voltage Transient

Derate Linearly

Operating and Storage Junction Temperature Range

Lead Temperature : 0.063” from Case for 10 Sec.

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

POWER MOSFETS

500

24

96

±30

±40

250

2.0

–55 to 150

300

24

30

1300

V

A

A

V

W

W/°C

°C

A

mJ

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

500V

24A

Ω

• Faster Switching

• Lower Leakage

• TO–258 Hermetic Package

StarMOS is a new generation of high voltage

N–Channel enhancement mode power MOSFETs.

This new technology minimises the JFET effect,

increases packing density and reduces the

on-resistance. StarMOS also achieves faster

switching speeds through optimised gate layout.

D

S

G

12

3

17.65 (0.695)

17.39 (0.685)

4.19 (0.165)

3.94 (0.155)

Dia.

1.65 (0.065)

1.39 (0.055)

Typ.

5.08 (0.200)

BSC

3.56 (0.140)

BSC

1.14 (0.707)

0.88 (0.035)

6.86 (0.270)

6.09 (0.240)

TO–258 Package Outline.

Dimensions in mm (inches)

Pin 1 – Drain

Pin 2 – Source

Pin 3 – Gate