Electronic Components Datasheet Search |
|
CY7C1081DV33_1105 Datasheet(PDF) 4 Page - Cypress Semiconductor |
|
CY7C1081DV33_1105 Datasheet(HTML) 4 Page - Cypress Semiconductor |
4 / 13 page CY7C1081DV33 Document #: 001-53992 Rev. *C Page 4 of 13 Maximum Ratings Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage temperature ..................................... –65 C to +150 C Ambient temperature with power applied ................................................ –55 C to +125 C Supply voltage on VCC relative to GND [1]........ –0.5 V to +4.6 V DC voltage applied to outputs in high-Z state[1]........................................–0.5 V to VCC + 0.5 V DC input voltage[1]....................................–0.5 V to VCC + 0.5 V Current into outputs (LOW) ..............................................20 mA Static discharge voltage.................................................>2001 V (MIL-STD-883, Method 3015) Latch up current ...........................................................>140 mA Operating Range Range Ambient Temperature VCC Speed Industrial –40 °C to +85 °C 3.3 V 0.3 V 12 ns DC Electrical Characteristics Over the Operating Range Parameter Description Test Conditions –12 Unit Min Max VOH Output HIGH voltage VCC = Min, IOH = –4.0 mA 2.4 – V VOL Output LOW voltage VCC = Min, IOL = 8.0 mA – 0.4 V VIH Input HIGH voltage 2.0 VCC + 0.3 V VIL Input LOW voltage[1] –0.3 0.8 V IIX Input leakage current GND < VIN < VCC –1 +1 A IOZ Output leakage current GND < VOUT < VCC, Output Disabled –1 +1 A ICC VCC operating supply current VCC = Max, f = fmax = 1/tRC, IOUT = 0 mA CMOS levels – 300 mA ISB1 Automatic CE power-down current – TTL inputs Max VCC, CE1 > VIH, CE2 < VIL, VIN > VIH or VIN < VIL, f = fmax –120 mA ISB2 Automatic CE power-down current – CMOS inputs Max VCC, CE1 > VCC – 0.3 V, CE2 < 0.3 V, VIN > VCC – 0.3 V, or VIN < 0.3 V, f = 0, –100 mA Capacitance Tested initially and after any design or process changes that may affect these parameters. Parameter Description Test Conditions Max Unit CIN Input capacitance TA = 25 C, f = 1 MHz, VCC = 3.3 V 32 pF COUT I/O capacitance 40 pF Thermal Resistance Tested initially and after any design or process changes that may affect these parameters. Parameter Description Test Conditions FBGA Unit JA Thermal resistance (junction to ambient) Still air, soldered on a 3 × 4.5 inch, four-layer printed circuit board 55 C/W JC Thermal resistance (junction to case) 23.04 C/W Note 1. VIL (min) = –2.0 V and VIH(max) = VCC + 2 V for pulse durations of less than 20 ns. [+] Feedback |
Similar Part No. - CY7C1081DV33_1105 |
|
Similar Description - CY7C1081DV33_1105 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |