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CY7C1081DV33_1105 Datasheet(PDF) 4 Page - Cypress Semiconductor

Part # CY7C1081DV33_1105
Description  64-Mbit (4 M x 16) Static RAM 2.0-V data retention
Download  13 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1081DV33_1105 Datasheet(HTML) 4 Page - Cypress Semiconductor

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CY7C1081DV33
Document #: 001-53992 Rev. *C
Page 4 of 13
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ..................................... –65
C to +150 C
Ambient temperature with
power applied ................................................ –55
C to +125 C
Supply voltage on VCC relative to GND [1]........ –0.5 V to +4.6 V
DC voltage applied to outputs
in high-Z state[1]........................................–0.5 V to VCC + 0.5 V
DC input voltage[1]....................................–0.5 V to VCC + 0.5 V
Current into outputs (LOW) ..............................................20 mA
Static discharge voltage.................................................>2001 V
(MIL-STD-883, Method 3015)
Latch up current ...........................................................>140 mA
Operating Range
Range
Ambient
Temperature
VCC
Speed
Industrial
–40 °C to +85 °C
3.3 V
 0.3 V
12 ns
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
–12
Unit
Min
Max
VOH
Output HIGH voltage
VCC = Min, IOH = –4.0 mA
2.4
V
VOL
Output LOW voltage
VCC = Min, IOL = 8.0 mA
0.4
V
VIH
Input HIGH voltage
2.0
VCC + 0.3
V
VIL
Input LOW voltage[1]
–0.3
0.8
V
IIX
Input leakage current
GND < VIN < VCC
–1
+1
A
IOZ
Output leakage current
GND < VOUT < VCC, Output Disabled
–1
+1
A
ICC
VCC operating supply current
VCC = Max, f = fmax = 1/tRC, IOUT = 0 mA CMOS levels
300
mA
ISB1
Automatic CE power-down
current – TTL inputs
Max VCC, CE1 > VIH, CE2 < VIL,
VIN > VIH or VIN < VIL, f = fmax
–120
mA
ISB2
Automatic CE power-down
current – CMOS inputs
Max VCC, CE1 > VCC – 0.3 V, CE2 < 0.3 V,
VIN > VCC – 0.3 V, or VIN < 0.3 V, f = 0,
–100
mA
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
Test Conditions
Max
Unit
CIN
Input capacitance
TA = 25 C, f = 1 MHz, VCC = 3.3 V
32
pF
COUT
I/O capacitance
40
pF
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
Test Conditions
FBGA
Unit
JA
Thermal resistance
(junction to ambient)
Still air, soldered on a 3 × 4.5 inch,
four-layer printed circuit board
55
C/W
JC
Thermal resistance
(junction to case)
23.04
C/W
Note
1. VIL (min) = –2.0 V and VIH(max) = VCC + 2 V for pulse durations of less than 20 ns.
[+] Feedback


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