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SML40L57 Datasheet(PDF) 1 Page - Seme LAB

Part No. SML40L57
Description  N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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Maker  SEME-LAB [Seme LAB]
Homepage  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

SML40L57 Datasheet(HTML) 1 Page - Seme LAB

  SML40L57 Datasheet HTML 1Page - Seme LAB SML40L57 Datasheet HTML 2Page - Seme LAB  
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SML40L57
6/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
VDSS
ID
IDM
VGS
VGSM
PD
TJ , TSTG
TL
IAR
EAR
EAS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current 1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ Tcase = 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 2
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
400
57
228
±30
±40
520
4.16
–55 to 150
300
57
50
2500
V
A
A
V
W
W/°C
°C
A
mJ
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting TJ = 25°C, L = 1.54mH, RG = 25W, Peak IL = 57A
VDSS
400V
ID(cont)
57A
RDS(on) 0.070W
W
W
W
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular TO–264 Package
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
D
S
G
19.51 (0.768)
26.49 (0.807)
1.80 (0.071)
2.01 (0.079)
4.60 (0.181)
5.21 (0.205)
2.79 (0.110)
3.18 (0.125)
5.45 (0.215) BSC
2 plcs.
0.76 (0.030)
1.30 (0.051)
2.29 (0.090)
2.69 (0.106)
2.59 (0.102)
3.00 (0.118)
0.48 (0.019)
0.84 (0.033)
123
3.10 (0.122)
3.48 (0.137)
TO–264AA Package Outline.
Dimensions in mm (inches)
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source


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