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SML40L57 Datasheet(PDF) 1 Page - Seme LAB |
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SML40L57 Datasheet(HTML) 1 Page - Seme LAB |
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SML40L57 6/99 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 2 N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 400 57 228 ±30 ±40 520 4.16 –55 to 150 300 57 50 2500 V A A V W W/°C °C A mJ ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 1.54mH, RG = 25W, Peak IL = 57A VDSS 400V ID(cont) 57A RDS(on) 0.070W W W W • Faster Switching • Lower Leakage • 100% Avalanche Tested • Popular TO–264 Package StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. D S G 19.51 (0.768) 26.49 (0.807) 1.80 (0.071) 2.01 (0.079) 4.60 (0.181) 5.21 (0.205) 2.79 (0.110) 3.18 (0.125) 5.45 (0.215) BSC 2 plcs. 0.76 (0.030) 1.30 (0.051) 2.29 (0.090) 2.69 (0.106) 2.59 (0.102) 3.00 (0.118) 0.48 (0.019) 0.84 (0.033) 123 3.10 (0.122) 3.48 (0.137) TO–264AA Package Outline. Dimensions in mm (inches) Pin 1 – Gate Pin 2 – Drain Pin 3 – Source |
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