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CY7C185-35SC Datasheet(PDF) 1 Page - Cypress Semiconductor

Part # CY7C185-35SC
Description  64-Kbit (8 K 횞 8) Static RAM CMOS for optimum speed/power
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C185-35SC Datasheet(HTML) 1 Page - Cypress Semiconductor

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CY7C185
64-Kbit (8 K × 8) Static RAM
Cypress Semiconductor Corporation
198 Champion Court
San Jose
, CA 95134-1709
408-943-2600
Document #: 38-05043 Rev. *E
Revised April 20, 2011
Features
High speed
15 ns
Fast tDOE
Low active power
715 mW
Low standby power
85 mW
CMOS for optimum speed/power
Easy memory expansion with CE1, CE2 and OE features
TTL-compatible inputs and outputs
Automatic power-down when deselected
Available in non Pb-free 28-pin (300-Mil) Molded SOJ, 28-pin
(300-Mil) Molded SOIC and Pb-free 28-pin (300-Mil) Molded
DIP
Functional Description
The CY7C185[1] is a high-performance CMOS static RAM
organized as 8192 words by 8 bits. Easy memory expansion is
provided by an active LOW chip enable (CE1), an active HIGH
chip enable (CE2), and active LOW output enable (OE) and
tri-state drivers. This device has an automatic power-down
feature (CE1 or CE2), reducing the power consumption by 70%
when deselected. The CY7C185 is in a standard 300-mil-wide
DIP, SOJ, or SOIC package.
An active LOW write enable signal (WE) controls the
writing/reading operation of the memory. When CE1 and WE
inputs are both LOW and CE2 is HIGH, data on the eight data
input/output pins (I/O0 through I/O7) is written into the memory
location addressed by the address present on the address pins
(A0 through A12). Reading the device is accomplished by
selecting the device and enabling the outputs, CE1 and OE
active LOW, CE2 active HIGH, while WE remains inactive or
HIGH. Under these conditions, the contents of the location
addressed by the information on address pins are present on the
eight data input or output pins.
The input or output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and write enable (WE)
is HIGH. A die coat is used to insure alpha immunity.
A1
A2
A3
A4
A5
A6
A7
A8
I/O0
8K x 8
ARRAY
INPUT BUFFER
COLUMN DECODER
POWER
DOWN
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
CE1
CE2
WE
OE
Logic Block Diagram
Selection Guide
Description
-15
-20
-35
Maximum Access Time (ns)
15
20
35
Maximum Operating Current (mA)
130
110
100
Maximum CMOS Standby Current (mA)
15
15
15
Note
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
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