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CY7C024E-55AXC Datasheet(PDF) 9 Page - Cypress Semiconductor

Part # CY7C024E-55AXC
Description  4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT, BUSY
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C024E-55AXC Datasheet(HTML) 9 Page - Cypress Semiconductor

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CY7C024E, CY7C0241E
CY7C025E, CY7C0251E
Document Number: 001-62932 Rev. *B
Page 9 of 22
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.[14]
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied ........................................... –55 °C to +125 °C
Supply voltage to ground potential ...............–0.3 V to +7.0 V
DC voltage applied to outputs
in high Z state ...............................................–0.5 V to +7.0 V
DC input voltage[15] ......................................–0.5 V to +7.0 V
Output current into outputs (LOW) .............................. 20 mA
Static discharge voltage.......................................... > 2001 V
(per MIL-STD-883, Method 3015)
Latch-up current .................................................... > 200 mA
Operating Range
Range
Ambient Temperature
VCC
Commercial
0 °C to +70 °C
5 V
 10%
Industrial
–40 °C to +85 °C
5 V
 10%
Notes
14. The voltage on any input or I/O pin cannot exceed the power pin during power-up.
15. Pulse width < 20 ns.
16. fMAX = 1/tRC = All inputs cycling at f = 1/tRC (except output enable). f = 0 means no address or control lines change. This applies only to inputs at CMOS level
standby ISB3.
17. Tested initially and after any design or process changes that may affect these parameters.
Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
–15
–25
–55
Unit
Min Typ Max Min Typ Max Min Typ Max
VOH
Output HIGH
voltage
VCC = Min, IOH = –4.0 mA
2.4
2.4
2.4
V
VOL
Output LOW
voltage
VCC = Min, IOL = 4.0 mA
0.4
0.4
0.4
V
VIH
Input HIGH voltage
2.2
2.2
2.2
V
VIL
Input LOW voltage
0.8
0.8
0.8
V
IIX
Input leakage
current
GND
 V
I  VCC
–10
+10 –10
+10 –10
+10
A
IOZ
Output leakage
current
Output disabled,
GND
 V
O  VCC
–10
+10 –10
+10 –10
+10
A
ICC
Operating current
VCC = Max, IOUT = 0 mA,
Outputs Disabled
Commercial
190 285
170 250
150 230
mA
Industrial
215 305
180 290
180 290
ISB1
Standby current
(both ports TTL
levels)
CEL and CER  VIH,
f = fMAX
[16]
Commercial
50
70
40
60
20
50
mA
Industrial
65
95
55
80
55
80
ISB2
Standby current
(one port TTL level)
CEL or CER  VIH,
f = fMAX
[16]
Commercial
120 180
100 150
75
135
mA
Industrial
135 205
120 175
120 175
ISB3
Standby current
(both ports CMOS
levels)
Both Ports CE and CER
VCC – 0.2 V, VIN  VCC – 0.2 V
or VIN  0.2 V, f = 0
[16]
Commercial
0.05 0.5
0.05 0.50
0.05 0.50 mA
Industrial
0.05 0.5
0.05 0.50
0.05 0.50
ISB4
Standby current
(both ports CMOS
levels)
One Port CEL or
CER  VCC – 0.2 V,
VIN VCC–0.2VorVIN 0.2V,
Active Port Outputs, f = fMAX
[16]
Commercial
110 160
90
130
70
120
mA
Industrial
125 175
110 150
110 150
Capacitance
Parameter[17]
Description
Test Conditions
Max
Unit
CIN
Input capacitance
TA = 25 °C , f = 1 MHz,
VCC = 5.0 V
10
pF
COUT
Output capacitance
10
pF
[+] Feedback


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