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CY2XF33LXC700T Datasheet(PDF) 5 Page - Cypress Semiconductor

Part # CY2XF33LXC700T
Description  High-Performance LVDS Oscillator With Frequency Margining ??Pin Control
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY2XF33LXC700T Datasheet(HTML) 5 Page - Cypress Semiconductor

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CY2XF33
Document Number: 001-53148 Rev. *E
Page 5 of 12
Absolute Maximum Conditions
Parameter
Description
Condition
Min
Max
Unit
VDD
Supply voltage
–0.5
4.4
V
VIN
[1]
Input voltage, DC
Relative to VSS
–0.5
VDD + 0.5
V
TS
Temperature, storage
Non operating
–55
135
C
TJ
Temperature, junction
–40
135
C
ESDHBM
ESD protection (human body model)
JEDEC STD 22-A114-B
2000
V
JA
[2]
Thermal resistance, junction to ambient 0 m/s airflow
64
C/W
Operating Conditions
Parameter
Description
Min
Typ
Max
Unit
VDD
3.3 V supply voltage range
3.135
3.3
3.465
V
2.5 V supply voltage range
2.375
2.5
2.625
V
TPU
Power up time for VDD to reach minimum specified voltage (power ramp is
monotonic)
0.05
500
ms
TA
Ambient temperature (commercial)
0
70
C
Ambient temperature (industrial)
–40
85
C
Notes
1. The voltage on any input or I/O pin cannot exceed the power pin during power up.
2. Simulated. The board is derived from the JEDEC multilayer standard. It measures 76 x 114 x 1.6 mm and has 4-layers of copper (2/1/1/2 oz.). The internal layers
are 100% copper planes, while the top and bottom layers have 50% metalization. No vias are included in the model.
3. IDD includes ~4 mA of current that is dissipated externally in the output termination resistors.
4. Not 100% tested, guaranteed by design and characterization.
DC Electrical Characteristics
Parameter
Description
Condition
Min
Typ
Max
Unit
IDD
[3]
Operating supply current
VDD = 3.465 V, CLK = 150 MHz, output
terminated
––
120
mA
VDD = 2.625 V, CLK = 150 MHz, output
terminated
––
115
mA
VOD
LVDS differential output voltage
VDD = 3.3 V or 2.5 V, defined in Figure 3
as terminated in Figure 2
247–454
mV
V
OD
Change in VOD between
complementary output states
VDD = 3.3 V or 2.5 V, defined in Figure 3
as terminated in Figure 2
––
50
mV
VOS
LVDS offset output voltage
VDD = 3.3 V or 2.5 V, defined in Figure 4
as terminated in Figure 2
1.125
1.375
V
V
OS
Change in VOS between
complementary output states
VDD = 3.3 V or 2.5 V, RTERM = 100 
between CLK and CLK#
––
50
mV
VIH
Input high voltage
0.7 ×
VDD
––
V
VIL
Input low voltage
0.3 ×
VDD
V
IIH0
Input high current, FS0 pin
Input = VDD
––
115
A
IIH1
Input high current, FS1 pin
Input = VDD
––
10
A
IIL0
Input low current, FS0 pin
Input = VSS
–50
A
IIL1
Input low current, FS1 pin
Input = VSS
–20
A
CIN0
[4]
Input capacitance, FS0 pin
15
pF
CIN1
[4]
Input capacitance, FS1 pin
4
pF


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