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SML100S11 Datasheet(PDF) 1 Page - Seme LAB |
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SML100S11 Datasheet(HTML) 1 Page - Seme LAB |
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SML100S11 5/99 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 2 N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000 11 44 ±30 ±40 280 2.24 –55 to 150 300 11 30 1210 V A A V W W/°C °C A mJ ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 20mH, RG = 25Ω, Peak IL = 11A VDSS 1000V ID(cont) 11A RDS(on) 1.000Ω Ω • Faster Switching • Lower Leakage • 100% Avalanche Tested • Surface Mount D3PAK Package StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. D S G 15.95 (0.628) 16.05 (0.632) 1.04 (0.041) 1.15 (0.045) 4.98 (0.196) 5.08 (0.200) 1.47 (0.058) 1.57 (0.062) 5.45 (0.215) BSC 2 plcs. 2.67 (0.105) 2.84 (0.112) 1.27 (0.050) 1.40 (0.055) 13.41 (0.528) 13.51 (0.532) 13.79 (0.543) 13.99 (0.551) 13 2 0.46 (0.018) 0.56 (0.022) 3 plcs. 1.22 (0.048) 1.32 (0.052) 1.98 (0.078) 2.08 (0.082) 11.51 (0.453) 11.61 (0.457) 3.81 (0.150) 4.06 (0.160) D3PAK Package Outline. Dimensions in mm (inches) Pin 1 – Gate Pin 2 – Drain Pin 3 – Source Heatsink is Drain. |
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