Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

SML100C4 Datasheet(PDF) 2 Page - Seme LAB

Part No. SML100C4
Description  N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Download  2 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  SEME-LAB [Seme LAB]
Homepage  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

SML100C4 Datasheet(HTML) 2 Page - Seme LAB

  SML100C4 Datasheet HTML 1Page - Seme LAB SML100C4 Datasheet HTML 2Page - Seme LAB  
Zoom Inzoom in Zoom Outzoom out
 2 / 2 page
background image
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
Drain to Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
f = 1MHz
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.89
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
3.6
14.4
1.3
290
580
1.65
3.3
IS
ISM
VSD
trr
Qrr
(Body Diode)
(Body Diode)
VGS = 0V , IS = – ID [Cont.]
IS = – ID [Cont.] , dls / dt = 100A/µs
IS = – ID [Cont.] , dls / dt = 100A/µs
Continuous Source Current
Pulsed Source Current1
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
µC
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
CDC
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
pF
pF
nC
ns
DYNAMIC CHARACTERISTICS
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
SML100C4
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
6/99
Characteristic
Min.
Typ.
Max. Unit
125
125
3.6
SOA1
SOA2
ILM
Safe Operating Area
Safe Operating Area
Inductive Current Clamped
VDS = 0.4VDSS , IDS = PD / 0.4VDSS , t = 1 Sec.
IDS = ID [Cont.] , VDS = PD / ID [Cont.] , t = 1 Sec.
W
A
SAFE OPERATING AREA CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
BVDSS
IDSS
IGSS
VGS(TH)
ID(ON)
RDS(ON)
VGS = 0V , ID = 250µA
VDS = VDSS
VDS = 0.8VDSS , TC = 125°C
VGS = ±30V , VDS = 0V
VDS = VGS , ID = 1.0mA
VDS > ID(ON) x RDS(ON) Max
VGS = 10V
VGS = 10V , ID = 0.5 ID [Cont.]
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
(VGS = 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
On State Drain Current 2
Drain – Source On State Resistance 2
1000
250
1000
±100
24
3.6
4.00
V
µA
nA
V
A
9
STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
15
22
805
950
115
160
37
60
35
55
4.3
7
18
27
10
20
12
24
33
50
16
32


Html Pages

1  2 


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn