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STT3962N Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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STT3962N Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 4 page STT3962N N-Channel Enhancement Mode Mos.FET 2.3 A, 60 V, RDS(ON) 0.153 Elektronische Bauelemente 20-Aug-2010 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Miniature TSOP-6 surface mount package saves board space. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) RDS(on) ( ID(A) 60 0.153@VGS= 10V 2.3 0.185@VGS= 4.5V 2.1 ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Symbol Ratings Unit Maximum Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current a ID @TA=25℃ ID @TA=70℃ 2.3 A 1.9 Pulsed Drain Current b IDM 8 A Continuous Source Current (Diode Conduction) a IS 1.05 A Power Dissipation a PD @TA=25℃ 1.15 W PD @TA=70℃ 0.7 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Unit Maximum Junction to Ambient a t ≦ 10 sec RJA 100 °C / W Steady State 166 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0 0.10 B 2.60 3.00 H 0.60 REF. C 1.40 1.80 J 0.12 REF. D 1.10 MAX. K 0° 10° E 1.90 REF. L 0.95 REF. F 0.30 0.50 TSOP-6 B L F H C J D G K A E 1 23 4 5 6 G G S S D D |
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