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STT3599C Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # STT3599C
Description  N & P-Channel Enhancement Mode Mos.FET
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

STT3599C Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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STT3599C
(N-Ch) 3.7 A, 30 V, RDS(ON) 63 m
(P-Ch) -2.7 A, -30 V, RDS(ON) 112 m
N & P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
19-Jul-2010 Rev. A
Page 1 of 7
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.

G1 S2
G2
D1 S1
D2
6
1
3
2
5
4
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density
trench process to provide low RDS(on) and to ensure minimal power
loss and heat dissipation. Typical applications are DC-DC converters
and power management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and cordless
telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe TSOP-6 saves board space.
Fast switching speed.
High performance trench technology.
PRODUCT SUMMARY
PRODUCT SUMMARY
VDS(V)
RDS(on) (
ID(A)
30
0.063@VGS= 10V
3.7
0.090@VGS= 4.5V
3.1
-30
0.112@VGS= -10V
-2.7
0.172@VGS= -4.5V
-2.2
ABSOLUTE MAXIMUM RATINGS(TA=25UNLESS OTHERWISE NOTED)
Parameter
Symbol
Ratings
Unit
N-Channel
P-Channel
Drain-Source Voltage
VDS
30
-30
V
Gate-Source Voltage
VGS
±20
±20
V
Continuous Drain Current
a
ID @TA=25℃
ID @TA=70℃
3.7
-2.7
A
2.9
-2.1
Pulsed Drain Current
b
IDM
8
-8
A
Continuous Source Current (Diode Conduction)
a
IS
1.05
-1.05
A
Power Dissipation
a
PD @TA=25℃
1.15
W
PD @TA=70℃
0.7
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
N-Channel
P-Channel
Unit
Typ
Max
Typ
Max
Maximum Junction to Ambient
a
t ≦ 10 sec
RJA
93
110
93
110
/ W
Steady State
130
150
130
150
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature.

Gate

Source

Drain

Gate

Source

Drain
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
2.70
3.10
G
0
0.10
B
2.60
3.00
H
0.60 REF.
C
1.40
1.80
J
0.12 REF.
D
1.10 MAX.
K
10°
E
1.90 REF.
L
0.95 REF.
F
0.30
0.50
TSOP-6
B
L
F
H
C
J
D G
K
A
E


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